4500 V/1500 A New Press Pack IEGT that Helps to Reduce the Size and Power Consumption for High-Voltage Converters
Product News 2024-04
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a press pack IEGT "ST1500GXH35A" with ratings of 4500 V/1500 A that employs newly developed trench-type IEGT[1] chips for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The newly developed IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance and high-temperature tolerance.
Therefore, compared with the existing product[2], the collector-emitter saturation voltage (VCE(sat))[3] of the new ST1500GXH35A has been reduced by approximately 26 % from 3.4 V to 2.5 V (typical). In addition, the new product features wide RBSOA[4] by improving shutdown tolerance, and tests short-circuit tolerance at a measurement voltage of 3400 V[5].
Furthermore, the junction temperature rating (Tj) has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1500GXH35A helps to reduce the size and power consumption for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Notes:
[1] IEGT: Injection Enhanced Gate Transistor
[2] Existing product: ST1500GXH26A
[3] VCE(sat) Conditions: VGE=15 V, IC=1500 A, Tj=125 °C
[4] RBSOA: Reverse-bias safe operating area
[5] Existing products has no short-circuit tolerance test
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low-collector-emitter saturation: VCE(sat)=2.6 V (typ.) (VGE=15 V, IC=1500 A, Tj=150 °C)
- Expanded RBSOA (reinforced for 3400 V of test voltage) [6], tested short-circuit tolerance[5]
- Maximum junction temperature rating: Tj (max)=150 °C
Note:
[6] Shutdown test voltage of the existing product is 3000 V
Main Specifications
(Tc = 25 °C, unless otherwise specified)
| Part number | ST1500GXH35A | |||
|---|---|---|---|---|
| Package | 2-120B1S | |||
| Absolute maximum ratings |
Collector-emitter voltage VCES (V) | 4500 | ||
| Gate-emitter voltage VGES (V) | ±20 | |||
| Collector current (DC) IC (A) | Tf=104 °C | 1500 | ||
| Junction temperature Tj (°C) | -40 to 150 | |||
| Electrical characteristics |
Collector-emitter saturation voltage VCE(sat) (V) |
VGE =15 V, IC =1500 A, Tj=150 °C |
Typ. | 2.60 |
| Turn-on switching loss Eon (J) |
VCC=2800 V, IC=1500 A, RG(on)=2.7 Ω, Ls≈300 nH, Tj=150 °C |
Typ. | 4.90 | |
| Turn-off switching loss Eoff (J) |
VCC=2800 V, IC=1500 A, RG(off)=68 Ω, Ls≈300 nH, Tj=150 °C |
Typ. | 8.95 | |
| Short circuit pulse width tPSC (μs) |
VCC=3400 V, VGE=±15 V, RG(on)=2.7 Ω, RG(off)=68 Ω, Ls≈150 nH, Tj=125 °C |
Max | 10 | |
Internal Circuit
Application Circuit Examples
Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
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