Product News 2018-04
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“TPHR7904PB” and “TPH1R104PB” are new 40 V N-channel power MOSFET products for automotive applications using the small, low-resistance SOP Advance(WF) package.
By mounting our U-MOSIX-H series chip having the latest trench structure on the small, low-resistance SOP Advance(WF) package, the new products feature low On-resistance characteristics, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices & Storage Corporation’s previous series (U-MOSIV), contributing to reduce EMI[1].
The SOP Advance(WF) package uses a wettable flank terminal structure[2].
Notes:
[1] EMI (Electromagnetic interference)
[2] Wettable flank terminal structure: A terminal structure that allows automated optical inspection of installation on boards.
(@Ta=25 °C)
Part number |
Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max (mΩ) |
Built-in Zener Diode between Gate-Source |
Series | Package | ||
---|---|---|---|---|---|---|---|
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
@VGS =6 V |
@VGS =10 V |
||||
40 | 150 | 1.3 | 0.79 |
No | U-MOSIX-H | SOP Advance(WF) | |
120 | 1.96 | 1.14 |
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.