Product News 2024-08
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has started mass production of two automotive P-channel power MOSFETs using the TSON Advance(WF) package and has expanded its lineup.
The products are -40V "XPN19014MC" and -60V "XPN27016MC."
"XPN19014MC" and "XPN27016MC" are qualified with the automotive reliability standard AEC-Q101.
The package is a surface mount type TSON Advance(WF) that uses a wettable flank terminal structure, facilitating automated on-board visual inspection. In addition, it has reduced package resistance by adopting the Cu connector structure.
The drain-source On-resistance is specified even under -4.5V measurement conditions, enabling stable operation even during a battery voltage drop. Furthermore, the gate-threshold voltage width is 1.1V, which reduces drain current variance and allows easy control when used in parallel.
(Ta=25°C unless otherwise specified)
Part number |
|||||
---|---|---|---|---|---|
Polarity |
P-channel |
||||
Absolute maximum ratings |
Drain-source voltage VDSS (V) |
-40 |
-60 |
||
Drain current (DC) ID (A) |
-20 |
-25 |
|||
Drain current (pulsed) IDP (A) |
-60 |
-50 |
|||
Channel temperature Tch (°C) |
175 |
||||
Electrical characteristics |
Drain-source on-resistance RDS(ON) (mΩ) |
VGS=-4.5V |
Max |
29.2 |
36.0 |
VGS=-10V |
Max |
18.7 |
27.3 |
||
Gate threshold voltage Vth (V) |
VDS=-10V |
-1.0 to -2.1 |
|||
Thermal characteristics |
Channel-to-case thermal impedance Zth(ch-c) (°C/W) |
Tc=25°C |
Max |
2.3 |
1.5 |
Package |
TSON Advance(WF) |
||||
Series |
U-MOSVI |
Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
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