SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (trr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (Ir) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

Lineup

VRRM (Max) (V)
IF(DC) (Max) (A)
Number of Circuits
Package name (Toshiba)
VFM (Max) (V)
Results:
unit:
TO-220F-2L

Package Size

W : 10.0 mm 0.39 inch
L : 15.0 mm 0.59 inch
H : 4.5 mm 0.18 inch
TO-220-2L

Package Size

W : 10.05 mm 0.40 inch
L : 15.3 mm 0.60 inch
H : 4.45 mm 0.18 inch
TO-247

Package Size

W : 15.94 mm 0.63 inch
L : 20.95 mm 0.82 inch
H : 5.02 mm 0.20 inch

All package dimensions are guaranteed in millimeters as mentioned on datasheet. Package dimension in inches is round to 2 significant digits converted with 1mm=0.0393701inch.

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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Recommended product

SiC Schottky barrier diodes (SBDs) with low switching loss
By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.
세부 사항
Si material and SiC material
Contributes to high efficiency and low loss of high output power supply
Significantly reduced recovery loss compared to FRD: fast recovery diodes
세부 사항
Improved JBS structure to reduce the leakage current and increase the surge current capability
The improved JBS structure has been applied to improve the leakage current of the SBD and the surge current capacity.
Diodes / SiC Schottky Barrier Diodes
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SiC devices suitable for power supply circuits
SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Diodes / SiC Schottky Barrier Diodes
세부 사항
High withstand voltage (reverse voltage) characteristics of SiC SBDs
A device with a high breakdown voltage has been realized with dielectric breakdown field strength nearly 10 times higher than that of Si.
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