January 10, 2018
Toshiba Electronic Devices & Storage Corporation
π-MOS IX series of 600V planar MOSFET combines high efficiency and low noise
TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “π-MOS IX,” a new series of 600V planar MOSFET. Mass production starts today.
With an optimized chip design, the π-MOS IX series provides 5dB lower[1] peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.
Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.
Part Number | Package | Absolute Maximum Rating | RDS(ON) MAX (Ω) at VGS=10V |
Qg Typ. (nC) |
Ciss Typ. (pF) |
Current generation (π-MOS VII series) Part Number |
|
---|---|---|---|---|---|---|---|
VDSS (V) | ID (A) | ||||||
TO-220SIS | 600 | 11 | 0.65 | 34 | 1320 | ||
TO-220SIS | 600 | 10 | 0.75 | 30 | 1130 | ||
TO-220SIS | 600 | 6 | 1.2 | 21 | 740 |
|
|
TO-220SIS | 600 | 3.7 | 1.9 | 14 | 490 |
|
Note:
[1] Comparison between TK10A60D and TK750A60F (65W notebook PC adapter in the 200MHz region),
Follow the link below for more on the mid-high voltage power MOSFET line-up.
Customer inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.