November 7, 2023
Toshiba Electronic Devices & Storage Corporation
KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Shipments start today.
Until now, Toshiba’s line-up of N-channel common-drain MOSFETs has focused on 12V products, mainly for use in protecting the lithium-ion battery packs of smartphones. The release of a 30V product realizes a wider selection of applications requiring voltages higher than 12V, such as load switching for the power lines of USB charging devices, and the protection of lithium-ion battery packs in laptop PCs and tablets.
Realizing a bi-directional switch with a low drain-source on-resistance (RDS(ON)) has required two MOSFETs, either 3.3×3.3mm or 2×2 mm, with low RDS(ON). Toshiba’s new product uses a new, small, thin package TCSPAG-341501 (3.37mm×1.47mm (typ.), t=0.11mm (typ.)), and features low source-source on-resistance (RSS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration
USB Power Delivery (USB PD) that supports a power supply ranging 15W (5V / 3A) to a maximum of 240W (48V / 5A) was developed for devices requiring high power supply. USB PD specifies a role swap function for swapping the power supply and receiving side, and requires devices with USB charging to support bi-directional power supply, so that both sides can supply and receive power. The new product is an N-channel common-drain MOSFET that supports bi-directional power supply, and that has a small mounting area.
Combining the product with a driver IC in Toshiba’s TCK42xG series forms a load switching circuit with a backflow prevention function or a power multiplexer circuit that can switch operations between Make-Before-Break (MBB) and Break-Before-Make (BBM). Toshiba has today released a reference design for a power multiplexer circuit (using common-drain MOSFETs) based on this product combination. Use of the reference design will help to reduce product design and development times.
Toshiba will continue to expand its product line-up and improve characteristics, to raise design flexibility.
(Unless otherwise specified, Ta=25°C)
|Source-source voltage VSSS (V)||30|
|Gate-source voltage VGSS (V)||±20|
|Source current (DC) IS (A)||9.0|
|Source current (DC) IS (A)||14.0|
|Source-source breakdown voltage V(BR)SSS (V)||VGS＝0V||Min||30|
|Source–source on-resistance RSS(ON) (mΩ)||VGS＝10V||Typ.||9.9|
|Size (mm)||Typ.||3.37×1.47, t=0.11|
|Sample Check & Availability|
 Device mounted on a 25mm×27.5mm, t=1.6mm, Cu Pad: 18µm, 407mm2, FR4 glass epoxy board
 Device mounted on a 25mm×27.5mm, t=1.6mm, Cu Pad: 70µm, 687.5mm2, FR4 glass epoxy board
Small Signal Device Sales & Marketing Dept.
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