May 8, 2017
Toshiba BiCS FLASH 64-layer 3D technology offers high performance and endurance designed for client, data center and enterprise SSDs
IRVINE, Calif. — Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, will debut its demonstration of the new 64-layer BiCS FLASHTM 3D technology on an XG Series client Non-Volatile Memory Express™ (NVMe™) Peripheral Component Interconnect Express®3 (PCIe®) SSD at Dell EMC World 2017, taking place May 8-11 in Las Vegas. Toshiba’s latest BiCS FLASH delivers a mature combination of performance, cost and endurance for all SSD types.
BiCS FLASH is a three-dimensional (3D) flash memory stacked cell structure4 suitable for applications that require high capacity and performance, such as enterprise and consumer SSDs. The 512 gigabit (GB5) (64 gigabyte), 64-layer device with 3-bit-per-cell (TLC) technology was recently added to Toshiba’s BiCS FLASH memory product line. The new BiCS FLASH is based on the third generation 64-layer stacking process featuring 65 percent greater bit density per mm2 than the company’s 48-layer, 256GB (32 gigabyte) device. The new XG Series SSD is an ideal platform to launch the 64-layer flash memory, due to the product’s broad adoption, maturity and robustness, honed over multiple generations of PCIe/NVMe client SSD product releases.
“The future of SSDs is 3D,” said Greg Wong, Founder and Principal Analyst of Forward Insights. “3D flash memory is enabling the production of higher capacity and more cost effective SSDs to better meet a variety of requirements across the consumer and enterprise spaces.”
Toshiba is currently migrating all client, data center and enterprise SSDs to the newest BiCS FLASH 64-layer 3D memory. This migration sets Toshiba up for extending their recent recognition by IDC as the fastest growing storage device vendor in the $17 billion solid state drive (SSD) segment for 20166.
“Toshiba SSDs powered by the 64-layer 3D device and in-house controller increase value to our customer’s products by boosting the maximum offered drive capacities and presenting superior speed, performance and endurance,” said Shigenori Yanagi, SSD technology executive, at Toshiba Memory Corporation. “We are excited to first demonstrate our newest BiCS FLASH technology at Dell EMC World and provide a glimpse of 3D flash memory-based SSDs to come.”
For more information on Toshiba’s line of industry-leading SSDs, please visit: http://toshiba.semicon-storage.com/us/product/storage-products.html. To learn more about Toshiba’s storage solutions follow @ToshibaStorage on Twitter.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today’s leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor, solid state drive and hard disk drive manufacturer and the world’s seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 550 consolidated companies employing over 188,000 people worldwide. Visit Toshiba's web site at http://toshiba.semicon-storage.com.
1BiCS FLASH is a trademark of Toshiba Corporation
2NVMe and NVM Express are trademarks of NVM Express, Inc.
3PCIe and PCI Express are registered trademarks of PCI-SIG
4A structure stacking flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND flash memory, where cells are formed on the silicon substrate.
5Toshiba defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1TB = 240 = 1,099,511,627,776 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary
6Worldwide Solid State Storage Quarterly Update, CY 4Q16 (Feb 2017 - Doc # US41259317); in 2016 over 2015, as measured by revenue and units. 2015 revenue and unit baseline includes separate results from companies merged with non-affiliate third-party companies in 2016.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.