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Toshiba develops low reverse-current Schottky diode with improved thermal performance

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging

Toshiba CUHS10F60
Toshiba CUHS10F60

Irvine, CA, July 12, 2018 – Toshiba America Electronic Components, Inc. announces the launch of their new Schottky barrier diode product “CUHS10F60”. The device is targeted at applications such as rectification and backflow prevention in power supply circuits.

The new CUHS10F60 features a low thermal resistance of 105°C/W in its newly developed US2H package that has the packaging code “SOD-323HE”. The package’s thermal resistance has been reduced by up to 50% compared to the conventional USC package, enabling easier thermal design.

Further improvements in performance have also been made when compared to other family members. In comparison to the CUS04 Schottky diode, the maximum reverse current has been reduced by around 60% to 40µA. This contributes to a lower power consumption in applications where it is used. In addition, its reverse voltage has been increased from 40V to 60V. This increases the range of applications where it can be used compared to the CUS10F40.

The CUHS10F60 is available and shipping in production quantities as of today.


Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Company names, product names, and service names mentioned herein may be trademarks of their respective companies.

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