Toshiba’s New 100V N-channel Power MOSFET Helps Reduce Power Consumption of Automotive Equipment
February 25, 2020
Launch of U-MOS X-H Series adopting Toshiba’s latest generation process
TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released “XK1R9F10QB,” a 100V N-channel power MOSFET suitable for automotive 48V equipment applications such as load switches, switching power supplies and driving of motors. Shipments start today.
The new product is the first in Toshiba’s new U-MOS X-H Series of MOSFET with a trench structure, and is fabricated with the company’s latest[1] generation process. Mounted on a low-resistance TO-220SM(W) package, it delivers industry-leading low On-resistance[2], with a maximum On-resistance of 1.92mΩ, an approximate 20% reduction against the current “TK160F10N1L.” This advance helps to reduce equipment power consumption. It also delivers reduced switching noise, due to optimization of capacitance characteristics, which helps to reduce EMI[3] of equipment. In addition, the threshold voltage width is tightened to 1V to enhance switching synchronization when used in parallel.
Applications
Automotive equipment (Load switches, switching power supplies and motor drives, etc.)
Features
- U-MOS X-H Series MOSFET with a trench structure
- Industry-leading low On-resistance
RDS(ON)=1.92mΩ (max) ＠VGS=10V
- AEC-Q101 qualified
Main Specifications
(@Ta=25°C)
| Part Number |
Polar |
Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max (mΩ) |
Channel-to-case thermal impedance Zth(ch-c) max(℃/W) |
Package |
Series |
||||
|---|---|---|---|---|---|---|---|---|---|---|
| Drain-source voltage VDSS(V) |
Drain current (DC) ID(A) |
Drain current (pulsed) IDP(A) |
Channel temperature Tch(℃) |
@VGS=6V | @ GS=10V |
|||||
N-channel |
100 |
160 |
480 |
175 |
3.31 |
1.92 |
0.4 |
TO-220SM(W) |
U-MOS X-H |
|
Notes:
[1] As of February 25, 2020
[2] Comparison with products with the same VDSS maximum rating and package class; According to a Toshiba survey, as of February 25, 2020.
[3] EMI (Electro Magnetic Interference)
Follow the link below for more on the new product.
Follow the link below for more on Toshiba Automotive MOSFETs.
*Company names, product names, and service names may be trademarks of their respective companies.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.