Toshiba Releases 600V Super Junction Structure N-Channel Power MOSFET that Helps to Improve Efficiency of Power Supplies

June 13, 2023

Toshiba Electronic Devices & Storage Corporation

Toshiba Releases 600V Super Junction Structure N-Channel Power MOSFET that Helps to Improve Efficiency of Power Supplies

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process[1], with a 600V super junction structure suitable for data centers, switching power supplies, and power conditioners for photovoltaic generators. The new product, "TK055U60Z1," is the first 600V product in the DTMOSVI series. Shipments start today.

By optimizing the gate design and process, 600V DTMOSVI series products reduce drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge, the figure of merit for MOSFET performance, by approximately 52%, compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This ensures the series achieve both low conduction loss and low switching loss, and helps to improve efficiency of the switching power supplies.

The new product is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive. The influence of inductance in the source wire in the package can be reduced to accentuate the high-speed switching performance of the MOSFET, which suppresses oscillation during switching.

Toshiba will continue to expand its 600V DTMOSVI series line-up, and its already released 650V DTMOSVI series products, and support energy conservation by reducing power loss in switching power supplies.

[1] As of June 2023.

Fig.1 Comparison of drain-source On-resistance and gate-drain charge
Fig.1 Comparison of drain-source On-resistance and gate-drain charge


  • Data centers (switching power supplies for servers, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems


  • Achieves low drain-source On-resistance × gate-drain charge and enables high efficiency switching power supplies

Main Specifications

(Ta=25°C unless otherwise specified) 

Part number TK055U60Z1
Absolute maximum ratings Drain-source voltage VDSS (V) 600
Drain current (DC) ID (A) 40
Channel temperature Tch (°C) 150
Electrical characteristics Drain-source On-resistance RDS(ON) (mΩ) VGS=10V max 55
Total gate charge Qg (nC) typ. 65
Gate-drain charge Qgd (nC) typ. 15
Input capacitance Ciss (pF) typ. 3680
Package Name TOLL
Size (mm) typ. 9.9×11.68, t=2.3
Sample Check & Availability Buy Online

Follow the links below for more on the new product.


Follow the link below for more on Toshiba’s MOSFETs.


To check availability of the new products at online distributors, visit:

Buy Online

Customer Inquiries:

  Power Device Sales & Marketing Dept.

  Tel: +81-44-548-2216

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

A new window will open