XPH13016MC

New Product

Power MOSFET (P-ch single)

Data sheet

XPH13016MC Data sheet/Japanese[Sep,2023]PDF: 1046KB

Data sheet

XPH13016MC Data sheet/English[Sep,2023]PDF: 945KB

Simulation Model

PSpice Model[Jun,2023]ZIP: 11KB

Simulation Model

LTspice Model[Jun,2023]ZIP: 21KB

Simulation Model

SIMetrix Model[Jun,2023]ZIP: 4KB

Simulation Model

ELDO Model[Nov,2023]ZIP: 5KB

Thermal Simulation Model

Simplified CFD Model[Aug,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 276KB

Application Note

Automotive Discrete Semiconductor MBD Introductory Application Note[Mar,2024]PDF: 1522KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

Data sheet

XPH13016MC Data sheet/Japanese[Sep,2023]PDF: 1046KB

Data sheet

XPH13016MC Data sheet/English[Sep,2023]PDF: 945KB

Application Note

Automotive Discrete Semiconductor MBD Introductory Application Note[Mar,2024]PDF: 1522KB

Simulation Model

PSpice Model[Jun,2023]ZIP: 11KB

Simulation Model

LTspice Model[Jun,2023]ZIP: 21KB

Simulation Model

SIMetrix Model[Jun,2023]ZIP: 4KB

Simulation Model

ELDO Model[Nov,2023]ZIP: 5KB

Thermal Simulation Model

Simplified CFD Model[Aug,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 276KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

Description

Application Scope DC-DC Converters / Automotive / Motor Drivers / Load Switches
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOP Advance(WF)
Package Image SOP Advance(WF)
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 5.0×6.0×0.95
Package Dimensions 보기
Land pattern dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -60 V
Gate-Source voltage VGSS +10/-20 V
Drain current ID -60 A
Power Dissipation PD 132 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -2.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 12.9 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 16.6 mΩ
Input capacitance (Typ.) Ciss - 6820 pF
Total gate charge (Typ.) Qg VGS=-10V 148 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Jun,2023

Jun,2023

Jun,2023

Nov,2023

Aug,2023

Dec,2023

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

(Note3)

ELDO™ is a trademark and simulation software of Siemens Industry Software Inc.
Click here for the list of trademarks related to Siemens Industry Software Inc.

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