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Power MOSFET (N-ch 500V<VDSS≤700V)
Application Scope | Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | DTMOSⅥ |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | DFN 8×8 |
---|---|
Package Image |
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Pins | 5 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
8.0×8.0×0.85 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 600 | V |
Gate-Source voltage | VGSS | +/-30 | V |
Drain current | ID | 16 | A |
Power Dissipation | PD | 130 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 4.0 | V |
Gate threshold voltage (Min) | Vth | - | 3.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 165 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1350 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 24 | nC |
Reverse recovery time (Typ.) | trr | - | 270 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 2700 | nC |
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