Toshiba Launches Small Photorelay Suitable for High-Frequency Signal Switches in Semiconductor Testers

- Reduced Insertion Loss and Improved High-Frequency Signal Transmission Characteristics -

October 17, 2023

Toshiba Electronic Devices & Storage Corporation

Toshiba Launches Small Photorelay Suitable for High-Frequency Signal Switches in Semiconductor Testers

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched "TLP3475W," a photorelay in a small, thin WSON4 package. It reduces insertion loss and suppresses power attenuation in high-frequency signals [1] and is suitable for the pin electronics of semiconductor testers, which use a large number of relays and require high-speed signaling. Volume shipments start today.

Toshiba’s optimized package designs reduces parasitic capacitance and inductance in the new photorelay. This reduces insertion loss and improves the transmission characteristic of high-frequency signals to 20GHz (typ.) [2], about 1.5 times lower [2] than Toshiba’s current product, TLP3475S.

TLP3475W uses a small, thin WSON4 package that is only 0.8mm (typ.) thick, making it the smallest [3] photorelay in the industry to realize improved high-frequency signal transmission characteristics. It is 40% lower in height than Toshiba’s ultra-small S-VSON4T package, allowing more products to be mounted on the same circuit board, and will contribute to improved measuring efficiency.

Toshiba will continue to expand its product line-up to support semiconductor testers that deliver higher speeds and greater functionality.

(a)Measurement point
(a)Measurement point
(b)S21 characteristics (reference value)
(b)S21 characteristics (reference value)

S21 insertion loss characteristics


  • Semiconductor testers (high-speed memory testers, high-speed logic testers, etc.)
  • Probe cards
  • Measuring equipment


  • Industry’s smallest [3] WSON4 package: 1.45mm×2.0mm (typ.), t=0.8mm (typ.)
  • Improving to pass the high-frequency signals: f=20GHz (typ.) @Insertion loss(S21) = -3dB
  • Normally open function (1-Form-A)

[1] When the frequency band is in the range of several hundreds of megahertz to several tens of gigahertz.
[2] The frequency band where the power attenuation ratio (insertion loss) when the signal passes through the output MOSFET is -3dB.
[3] For photorelays. As of October 2023, Toshiba survey.

Main Specifications

 (Unless otherwise specified, Ta = 25°C) 

Part Number TLP3475W
Package Name WSON4
Size (mm) 1.45×2.0 (typ.), t=0.8 (typ.)
Absolute maximum ratings OFF-state output terminal voltage VOFF (V) 60
ON-state current ION (A) 0.4
ON-state current (pulsed) IONP (A) 1.2
Operating temperature Topr (°C) -40 to 110
Coupled electrical characteristics Trigger LED current IFT (mA) max 3.0
ON-state resistance RON (Ω) typ. 1.1
max 1.5
Electrical characteristics Output capacitance COFF (pF) max 20
Switching characteristics Turn-on time tON (ms) @RL = 200Ω,
VDD = 20V,
IF = 5mA
max 0.25
Turn-off time tOFF (ms) 0.2
Isolation characteristics Isolation voltage BVS (Vrms) min 300
Sample Check & Availability Buy Online

Follow the link below for more on the new product.


Follow the link below for more on Toshiba’s photorelays.

Photorelays (MOSFET Output)

To check availability of the new products at online distributors, please visit:

Buy Online

Customer Inquiries

  Optoelectronic Device Sales & Marketing Dept.

  Tel: +81-44-548-2218

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