May 25, 2010
TAEC in IEEE MTT-S Booth # 813
ANAHEIM, Calif., — Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with a new "EL" series of high performance C-Band devices optimized for both high gain and power added efficiency. The "EL" high gain GaAs FETs are targeted for microwave radio s and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, May 25 - 27 in Anaheim, California.
"Toshiba's new EL series offers the highest level of performance of our three series of C-Band GaAs FETs, with both high power added efficiency and high gain," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit. We also offer a "UL" series with medium power added efficiency and gain, and the "SL" series, the standard performance level for this wavelength."
"With these high gain FETs and a newly developed 4-Watt (W) monolithic microwave integrated circuit (MMIC), also introduced during this exhibition, we offer a two-chip solution for microwave radio design. It eliminates the requirement for a mid-stage 4W discrete FET typically used in existing three-chip solutions, improves design flexibility, and saves board space and cost by reducing part count.
The first three devices in the "EL" series are 16W GaAs FETS targeted for three different C-Band frequency ranges. The TIM6472-16EL operates in the 6.4 gigahertz (GHz) to 7.2 GHz range, with output power of 1dB gain compression point (P1dB) of 42.5dBm (typ.), power gain at 1dB gain compression point (G1dB) of 11.0 dB (typ.) and power added efficiency of 3 7 percent. Compared to the similarly rated 16W device in the SL series, TIM6472-16SL, it offers a 4.0dB increase in gain (typ.), and an increase of 1.5dB compared to the similarly rated 16W UL device, TIM6472-16UL.
The second new device, TIM7179-16EL operates in the 7.1GHz to 7.9 GHz range, with P1dB of 42.5dBm (typ.), G1dB of 10.5 dB (typ.) and power added efficiency of 37 percent. Compared to the similarly rated 16W device in the SL series, TIM7179-16SL, it offers a 4.0dB increase in gain (typ.), and an increase of 2.0dB compared to the similarly rated 16W UL device, TIM7179- 16 UL.
The TIM7785-16EL operates in the 7.7GHz to 8.5 GHz range, with P1dB of 42.5dBm (typ.), G1dB of 10.0 dB (typ.) and power added efficiency of 3 6 percent. Compared to the similarly rated 16W device in the SL series, TIM7785-16SL, it offers a 4.5dB increase in gain, and an increase of 1.5dB compared to the similarly rated 16W UL device, TIM7785-16UL.
Samples of the Toshiba Power Added Efficiency GaAS FET family are available now. For pricing, please contact your Toshiba representative.
|Product Characteristics||TIM6472-16E L||TIM7179 - 16E L||TIM7785 - 16E L|
|Frequency||6.4 - 7.2 GHz||7.1 - 7.9 GH||7.7 - 8.5 GHz|
|Output Power, P1dB (typ.)||42.5dBm||42.5dBm||42.5dBm|
|Power Gain, G1dB (typ.)||11.0dB||10.5dB||10.0dB|
Bias conditions: V DS =10V, I DS set = 2.8A
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include FWA/BWA systems such as WiMAX, point-to-point (PTP) or point-to-multi-point (PTMP) terrestrial microwave radio links, satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems and other industrial uses. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial PTP or PTMP communications, radar systems and other industrial uses.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2009 WW Semiconductor Revenue, Dec. 2009). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com, or from your TAEC representative.
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