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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Radio-Frequency Devices

Toshiba offers various radio-frequency (RF) devices specifically designed to reduce the size and improve the performance of wireless communication equipment, such as switches, MOSFETs, transistors and diodes.


Toshiba’s RF-MOSFETs, with output power ranging from 0.1 W to 12 W and power supply voltage ranging from 3.6 V to 12.5 V, are suitable for RF power amplifiers.
RF Bipolar Transistors
Toshiba offers products with low distortion, low NF and high ESD tolerance for various applications.

RF Diodes

Radio-Frequency Schottky Barrier Diodes
They are suitable for radio-frequency signal mixer circuits because the forward voltage is low and the reverse recovery time is short.
Radio-Frequency Switching Diodes
They are particularly optimum for switching UHF/VHF frequency band of TV tuners.
Variable Capacitance Diodes
These diodes have the capacities variable depending on the value of the reverse bias voltage applied. They are used in radio-frequency matching circuits for electronic tuning.



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