Toshiba Adds 4 Watt C-BAND Microwave Power MMIC For RF-Microwave Pre-Amplifier Applications

May 25, 2010

Microwave power MMIC features 50 ohm internal matching and supports wide C-band frequency from 5.65 to 8.50GHz


ANAHEIM, Calif., — Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., are adding a 4-watt (W) C-Band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) for satellite applications. Developed by Toshiba Corp. (Toshiba) the new MMIC, along with other new products, will be shown in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim, California.

The 4W MMIC, TMD0608-4, operates in the 5.65 to 8.50 GHz1 range. With this broad bandwidth, a high gain of 27dB throughout the operating range, and 50 ohm internal matching, the device is well suited for use as a pre-amplifier in C-Band satellite and terrestrial communications.

The TMD0608-4 has output power at 1dB gain compression point (P1dB) of 35.5 dBm (typ.), power gain at 1dB gain compression point (G1dB) of 27dB (typ.), and is housed in a hermetically sealed package.

"Use of a broad band, internally matched amplifier can reduce the varieties of board design for different C-band requirements, save board space by minimizing the number of discrete amplification stages, and increase design reliability due to a reduced part count," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit.

Pricing and Availability

Samples of the Toshiba TMD0608-4 MMIC will be available 3Q 2010. For pricing, please contact your Toshiba representative.

Technical Specifications 50W TGI7785-50L GaN HEMT

Product Characteristics TMD0608-4
Frequency 65 to 8.50 GHz
Band C-Band
Output Power, P1dB (typ.) 35.5dBm
Power Gain, G1dB (typ.) 27.0dB
Drain Current, IDD (typ.) 2.6 Amps

Toshiba Microwave Product Overview

Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include FWA/BWA systems such as WiMAX, point-to-point (PTP) or point-to-multi-point (PTMP) terrestrial microwave radio links, satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems and other industrial uses. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial PTP or PTMP communications, radar systems and other industrial uses.

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2009 WW Semiconductor Revenue, Dec. 2009). For additional company and product information, please visit

1For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at, or from your TAEC representative.

MWRF 10 594

A new window will open