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Toshiba Enhances High Gain C-Band GaAs FET Product Line with New Power Amplifiers

June 20, 2012

Optimized for High Gain and Efficiency; New Amplifiers Targeted to Microwave Radios and Block Up Convertors

MONTREAL, — 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710  Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with the addition of two new devices optimized for power efficiency.  The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up convertors (BUCs), and will be exhibited in TAEC's booth #2710, at the 2012 IEEE MTT-S International Microwave Symposium from June 19 through 21in Montreal, Quebec, Canada.

Toshiba's new C-Band GaAs FETs for microwave digital radios support point-to-point and point-to-multipoint terrestrial communications, and BUCs support satellite communications.  The TIM5359-16EL and the TIM5964-16EL operate in the 5.3 to 5.9 GHz(1) range and the 5.9 to 6.4 GHz(1) range respectively.  The TIM5359-16EL and TIM5964-16EL have an output power at one-dB gain compression point of 16W, or 42.5dBm (typ.), linear gain at one-dB gain compression point of 11.5dB (typ.) and power added efficiency of 38 percent.

"High gain and high power added efficiency features will help designers build energy-efficient microwave radios," notedHomayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit.  "By combining our new 16W product along with the linearity enhanced broadband C-Band 4W microwave monolithic integrated circuit (MMIC), Toshiba's TMD0608-4, a simple two-chip design solution is provided for microwave radio applications.  The improved gain will help microwave designers reduce the number of parts in their overall system."

Technical Specifications

Product Characteristics TIM5359-16EL TIM5964-16EL
Frequency 5.3-5.9GHz 5.9-6.4GHz
Band C-Band C-Band
Output Power, P1dB(typ.) 16W 16W
Gain, G1dB(typ.) 11.5dB 11.

Power Efficiency 38% 38%

Pricing and Availability

Samples of the Toshiba high gain GaAs FET family are available now. For pricing, please contact your Toshiba representative. spacer

Toshiba Microwave Product Overview

Toshiba is a leading supplier of high-performance gallium nitride (GaN) and gallium arsenide (GaAs) microwave devices that operate in C, X, Ku and Ka frequency bands. Featuring high power added efficiency and high gain, these products are used in wireless applications such as RADAR systems, SATCOM, microwave link, medical equipment, and industrial applications. spacer

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading smartphones, tablets, MP3 players, cameras, medical devices, automotive electronics, enterprise solutions and more. Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s third largest semiconductor manufacturer (Gartner, 2011 Worldwide Semiconductor Revenue, March, 2012). Toshiba Corporation was founded in 1875 and today has over 554 subsidiaries and affiliates, with 210,000 employees worldwide. Visit Toshiba's web site at

(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second. spacer

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at, or from your TAEC representative.

MWRF 12 635

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