June 4, 2013
Optimized for High Power, Gain and Efficiency to Support Extended C-Band Applications
2013 INTERNATIONAL MICROWAVE SYMPOSIUM, SEATTLE, Wash., Booth #2027 – Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the expansion of its gallium nitride high electron mobility transistor (GaN HEMT ) lineup with the addition of three new devices optimized to support extended C-Band SATCOM applications . The TGI5867 broadband GaN HEMT family is targeted to block up convertors (BUCs) and solid state power amplifiers (SSPAs), and will be exhibited this week in Toshiba's booth, #2027 , at the 2013 IEEE MTT-S International Microwave Symposium from June 4-6 in Seattle, Washington.
Toshiba's new TGI5867 family supports extended C-Band (5.85 to 6.725 GHz frequency range) satellite communications, enabling satellite operators to offer more service and data traffic capacity to the market. The TGI5867 GaN HEMT family operate s in the 5.85 to 6.725 GHz1 range, with available power ratings of 25W, 50W and 100W. The TGI5867-100L has an output power at 100W or 50.0dBm2 (typ.) with an input power of 20W or 43dBm (nom.), linear gain at 11.0dB2 (typ.) and power added efficiency of 38 percent2. The TGI5867-50L and 25L have an output power at 50W2 (typ.) and at 25W2 (typ.), linear gain at 13.0dB (typ.) and power added efficiency of 40 and 45 percent2, respectively.
"The expansion of our GaN HEMT product family brings high gain, high power and broadband features that help designers build energy-efficient SSPAs and BUCs," noted Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit. "By adding the 100W, 50W and 25W lineup to our GaN HEMT product family, Toshiba is now able to provide a full GaN HEMT-base SSPA design solution for extended C-Band SATCOM applications. This solution will help microwave designers eliminate multiple power supply rails and reduce the number of parts in their overall system."
|Output Power, Pout (typ.)||100W||50W||25W|
|Linear Gain , GL (typ.)||11.0dB||13.0dB||13.0 dB|
|Power Efficiency||38 percent||40 percent||45 percent|
Samples of the Toshiba extended C-Band GaN HEMT family will be available in Q3 of 2013 . For pricing, please contact your Toshiba representative.
Toshiba is a leading supplier of high-performance gallium nitride (GaN) and gallium arsenide (GaAs) microwave devices that operate in C, X, Ku and Ka frequency bands. Featuring high power added efficiency and high gain, these products are used in wireless applications such as RADAR systems, SATCOM, microwave link, medical equipment, and industrial applications.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fifth largest semiconductor manufacturer (Gartner, 2012 Worldwide Semiconductor Revenue, April, 2013). Toshiba Corporation was founded in 1875 and today has over 554 subsidiaries and affiliates, with 210,000 employees worldwide. Visit Toshiba's web site at www.toshiba.co.jp/index.htm.
1For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
2with a supply voltage of 24V at 25°C
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.
MWRF 13 378