Achieves Industry’s Lowest-Class Insertion Loss; Suited to Smartphone Applications
IRVINE, Calif., November 19, 2015 -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced the development of a next generation TarfSOI™ (Toshiba advanced RF SOI) process optimized for radio-frequency (RF) switch applications. RF switch ICs fabricated using the new TaRF8 process, such as the new SP12T1, achieve the lowest-class2 of insertion loss3 in the industry. Sample shipments of SP12T RF switch ICs fabricated with the new process will start in January 2016.
Designed for use in smartphones, the SP12T RF switch IC features an integrated MIPI®-RFFE4 controller for mobile applications. The device is suitable for use in devices compliant with 3GPP™ GSM, UMTS, W-CDMA, LTE™ and LTE-Advanced5 standards.
Products utilizing the new TaRF8 SOI-CMOS6 TarfSOI front-end process achieve the lowest-class insertion loss in the industry, 0.32dB at 2.7GHz. Compared with products using Toshiba’s current TaRF6 process, insertion loss is improved by 0.1dB while maintaining the same level of distortion characteristics.
With the trend in mobile communications towards high data rate, high-capacity data transfers, RF switch ICs used in mobile devices, including smartphones, require multi-port support and improved RF performance. Lowering insertion loss is recognized as a particularly important factor in this, as it decreases RF transmission power loss, which can support a longer battery life for mobile devices.
Toshiba is developing high-performance RF switch ICs utilizing its in-house fab to apply SOI-CMOS technology, which is suitable for integrating analog and digital circuits. By handling all aspects of production flow, from RF process technology development to the design and manufacturing of RF switch chips, Toshiba can quickly improve SOI-CMOS process technology in response to feedback from the development results of its own RF switch IC products. This Integrated-Device-Manufacturer (IDM) approach allows Toshiba to rapidly establish new process technologies suited to actual products, and to enter the market with products fabricated with the latest process technology.
Toshiba will continue to improve the performance of its TarfSOI process technology and work towards meeting customer and market requirements for RF switch ICs by introducing cutting-edge technology ahead of other manufacturers.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today’s leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s sixth largest semiconductor manufacturer (Gartner, 2014 Worldwide Semiconductor Revenue Estimates, December 2014). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 590 consolidated companies employing over 200,000 people worldwide. Visit Toshiba's web site at www.toshiba.co.jp/index.htm
1Single Pole Twelve Throw Switch
2Power loss that occurs when an RF signal is transmitted through the switch, expressed in decibels (dB).
3In the RF switch IC market as of November 20, 2015. Toshiba survey
4A serial bus interface specification for the control of RF components for mobile devices, standardized by the RF Frontend (RFFE) Working Group of the MIPI (Mobile Industry Processor Interface) Alliance.
5Mobile communication standards specified by the 3GPP (3rd Generation Partnership Project).
6Technology to reduce parasitic capacitance by using an insulation layer under the channel of the MOSFET. SOI: Silicon-On-Insulator
*TarfSOI is a trademark of Toshiba Corporation.
*MIPI is a registered trademark of the MIPI Alliance, Inc. in the U.S. and other jurisdictions.
*3GPP and LTE are trademarks of ETSI.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.