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Lineup Expansion of New Generation Super Junction Structure N-Channel Power MOSFET “DTMOSVI Series” That Helps Improve Efficiency of Power Supplies

February 28, 2022

MOSFET

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added four products—“TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z”—to its DTMOSVI series of 650 V new generation super junction structure N-channel power MOSFETs that are for switching power supplies of industrial equipment used for data centers, power conditioners for photovoltaic generators and so forth.
The lineup has been expanded with respect to package, drain-source On-resistance, and gate-drain charge.

The new generation DTMOSVI series has reduced the figure of merit “drain-source On-resistance x gate-drain charge” by about 40 %[1] compared to the current generation DTMOSIV-H series. This can improve the efficiency of switching power supplies by about 0.36 %[2].

Toshiba will continue to expand its product lineup to meet market trends and help improve the efficiency of power supplies.

Notes :
[1] Comparison with the current generation DTMOSIV-H series
[2] As of February 2022, values measured by Toshiba (When TK040N65Z of TO-247 package in the new series is compared with TK62N60X of TO-247 package in the current series by using a PFC circuit with an output power of 2500 W)

Applications

Switching power supply for industrial equipment

  • Data center (Server, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems

Features

  • The values of “drain-source On-resistance x gate-drain charge” have been reduced by about 40 %[1] to improve the efficiency of switching power supplies.
  • Through hole type of TO-220 package

Main Specifications

(@Ta=25 °C)

Part

number

Package

Absolute

maximum

ratings

Electrical characteristics

Current series

(DTMOSIV-H)

part number

Name

Drain-

source

voltage

VDSS

(V)

Drain

current

(DC)

ID

(A)

Drain-source

On-resistance

RDS(ON)

max

 (Ω)

Total

gate

charge

Qg

typ.

(nC)

Gate-

drain

charge

Qgd

typ.

(nC)

Input

capacitance

Ciss

typ.

(pF)

@VGS=10 V

TK090E65Z

TO-220

650

30

0.09

47

12

2780

TK31E60X

TK110E65Z

24

0.11

40

11

2250

TK25E60X

TK155E65Z

18

0.155

29

8

1635

TK20E60W [3]

TK190E65Z

15

0.19

25

7.1

1370

TK16E60W [3]

 

Notes :
[3] DTMOSIV series

Internal Circuit

The illustration of internal circuits of lineup expansion of new generation super junction structure N-channel power MOSFET “DTMOSVI Series” that helps improve efficiency of power supplies : TK090E65Z, TK110E65Z, TK155E65Z, TK190E65Z.

Application Circuit Examples

 The illustration of application circuit examples of lineup expansion of new generation super junction structure N-channel power MOSFET “DTMOSVI Series” that helps improve efficiency of power supplies : TK090E65Z, TK110E65Z, TK155E65Z, TK190E65Z.

Note: 
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.


Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

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