TK110E65Z

Power MOSFET (N-ch 500V<VDSS≤700V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-220
Package Image TO-220
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.16×15.1×4.45
Package Dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 650 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 24 A
Power Dissipation PD 190 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 110
Input capacitance (Typ.) Ciss - 2250 pF
Total gate charge (Typ.) Qg VGS=10V 40 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

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Aug,2023

Oct,2023

Oct,2023

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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