Lineup Expansion of 80 V N-Channel Power MOSFET Products in Toshiba’s U-MOSX-H Series that Help Reduce the Power Consumption of Power Supplies

Product News 2023-08

The package photograph of lineup expansion of 80 V N-channel power MOSFET products in Toshiba’s U-MOSX-H series that help reduce the power consumption of power supplies.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched three 80 V N-channel power MOSFET products that use its latest generation[1] process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and expanded the lineup. The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 ｍΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.

The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics[2].) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.

Toshiba is expanding its lineup of products to help cut equipment power consumption.

Notes :

[1] As of August 2023.
[2] Total gate charge, gate switch charge, output charge

Applications

  • Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
  • Motor control equipment (motor drives, etc.)

Features

  • Latest generation[1] process U-MOSX-H series
  • Low On-resistance:
    TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
    TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
    TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V)
  • High channel temperature: Tch (max)=175 °C

Main Specifications

(Ta=25 °C unless otherwise specified)

Part number

Absolute maximum ratings

Drain-source

On-resistance

RDS(ON)

(mΩ)

Total

gate

charge

Qg

(nC)

Gate

switch charge

QSW

(nC)

Output

charge

Qoss

(nC)

Input

capacitance

Ciss

(pF)

Gate

 resistance

rg

(Ω)

Package

Drain-

source

 voltage

VDSS

(V)

Drain
current
(DC)
ID
(A)

Channel

temperature

Tch

(°C)

VGS=

10 V

VGS=

6 V

Tc=
25 °C

max

max

typ.

typ.

typ.

typ.

typ.

TPH3R008QM

80

100

175

3

4.3

71

21.6

74

5090

1.7

SOP Advance(N)

TPH6R008QM

59

6

8.4

38

12

40

2500

1.5

TPH8R808QM

52

8.8

12.5

26

8.6

31

1750

1.5

Internal Circuit

The illustration of internal circuit of lineup expansion of 80 V N-channel power MOSFET products in Toshiba’s U-MOSX-H series that help reduce the power consumption of power supplies.

Application Circuit Examples

The illustration of application circuit examples of lineup expansion of 80 V N-channel power MOSFET products in Toshiba’s U-MOSX-H series that help reduce the power consumption of power supplies.

Note :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

 

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

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