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Electrical characteristics of MOSFETs (Static Characteristics IGSS/IDSS/V(BR)DSS/V(BR)DXS)

Gate leakage current (IGSS)
The leakage current that occurs when the specified voltage is applied across gate and source with drain and source short-circuited

IGSSmeasurement

Drain cut-off current (IDSS)
The leakage current that occurs when a voltage is applied across drain and source with gate and source short-circuited

IDSSmeasurement

Drain-source breakdown voltage (V(BR)DSS/V(BR)DXS)
The maximum voltage that the device is guaranteed to block between drain and source
V(BR)DSS: With gate and source short-circuited
V(BR)DSX: With gate and source reverse-biased

V(BR)DSSmeasurement


V(BR)DSXmeasurement

Data sheet description

Characteristics Symbol Test Conditions Min Typ Max Unit
Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ±0.1 µA
Drain cut-off current IDSS VDS = 40 V, VGS = 0 V 10
Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 40 V
V(BR)DSX ID = 10 mA, VGS = -20 V 25
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