Technical Reviews

To conserve energy while meeting the increasing demand for electricity, Toshiba is promoting the development of various ICs and power devices, ranging from mobile, automotive, and other industrial applications to electric energy conversion equipment.
*Toshiba Review (Vol.72, No.5, November 2017)

Smartphones have become an indispensable part of daily life. To enhance the functionality of mobile devices, Toshiba is promoting the development of LDO regulator ICs, featuring superior power supply ripple rejection characteristics, load transient response and low power consumption.
*Toshiba Review (Vol.72, No.5, November 2017)

For power transmission and distribution applications, Toshiba has developed and released a line of injection enhanced gate transistors (IEGTs) known as press-pack IEGTs (PPIs) as switching devices for HVDC systems.
*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba has been releasing a wide variety of SiC power devices, and are also developing GaN power devices capable of performing high-speed switching operations, including a quasi-normally-off GaN HEMT and GaN MOSFET.
*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba developed the TC7738WBG power management IC for cSSD which achieves a reduction in power consumption and package size through the use of Wafer-level chip scale package (WCSP).
*Toshiba Review (Vol.72, No.5, November 2017)

In response to a need for a power management function, our PMMCD series ICs are expected to contribute to solution realizing a more compact footprint and cost savings by reducing the size and number of peripheral parts.
*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba has been developing a SIMO DC-DC converter equipped with a maximum-on-time (MOT) control technology, and a channel-consolidated multiple-switching (CCMS) control technology for IoT devices.
*Toshiba Review (Vol.72, No.5, November 2017)

H. Yamashita et al., "Low noise superjunction MOSFET with integrated snubber structure," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 32-35. doi: 10.1109/ISPSD.2018.8393595Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393595)

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393596)

T. Sugiyama et al., "Evaluation methodology for current collapse phenomenon of GaN HEMTs," 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, 2018, pp. 3B.4-1-3B.4-5. doi: 10.1109/IRPS.2018.8353559Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8353559)

T. Mizoguchi, Y. Sakiyama, N. Tsukamoto and W. Saito, "High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 307-310　doi: 10.1109/ISPSD.2019.8757656 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757656)

H. Kobayashi et al., "Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 515-518. doi: 10.1109/ISPSD.2019.8757691 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757691)

T. Nishiwaki et al., "Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 91-94. doi: 10.1109/ISPSD.2019.8757695 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757695)

K. Kobayashi et al., "100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 99-102. doi: 10.1109/ISPSD.2019.8757615 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757615)

T. Suwa et al., “Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs”, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 2019, pp. 101-104. Doi: 10.1109/SISPAD.2019.8870514 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8870514)