Technical Reviews

H. Kono et al., "Improved reliability of a 2200 V SiC MOSFET module with an epoxy-encapsulated insulated metal substrate", 2024 Power Conversion and Intelligent Motion (PCIM) Europe, Nürnberg, Germany, 2024, pp. 2017-2022. Doi: 10.30420/566262283
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10654147)

H. Irifune et al., "Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method", 2024 Power Conversion and Intelligent Motion (PCIM) Europe, Nürnberg, Germany, 2024, pp. 2023-2030. Doi: 10.30420/566262284
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10654094)

R. Gejo et al., "Improving the Short-Circuit Capability of RC-IEGT by Backside Double P-Ring Structure", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, pp. 25-28. Doi: 10.1109/ISPSD59661.2024.10579684
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10579684)

T. Nishiwaki et al., "Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, pp. 355-358. Doi: 10.1109/ISPSD59661.2024.10579695
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10579695)

S. Takeda et al., "Novel Approach to Mitigate Parasitic Oscillation of Power Modules with Parallel Connected SiC-MOSFETs", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, pp. 514-517. Doi: 10.1109/ISPSD59661.2024.10579559
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10579559)

S. Asaba et al., "Impact of Reverse Current Spreading on Diode Conduction Reliability of SBD-Embedded SiC-MOSFET with Deep p-Shield Structure", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, pp. 5-8. Doi: 10.1109/ISPSD59661.2024.10579582
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10579582)

What are information security requirements for storage products? We introduce our self-encrypting drives (SEDs) for nearline HDD.

* Toshiba Group’s Cyber Security Report 2024

Software is becoming an increasingly prominent aspect of automobile functions, strengthening cybersecurity measures for in-vehicle E/E systems is an urgent issue. Through the establishment of development processes and internal regulations that conform to ISO/SAE 21434, we ensure Cyber Security Management System (CSMS) compliance for the entire product life cycle of these automotive E/E system semiconductors that we supply, thereby contributing to continuous security risk management for automobiles.
* Toshiba Group’s Cyber Security Report 2024

What are information security requirements for storage products? We introduce our self-encrypting drives (SEDs) for nearline HDD.

* Toshiba Group’s Cyber Security Report 2023

Software is becoming an increasingly prominent aspect of automobile functions, strengthening cybersecurity measures for in-vehicle E/E systems is an urgent issue. Through the establishment of development processes and internal regulations that conform to ISO/SAE 21434, we ensure Cyber Security Management System (CSMS) compliance for the entire product life cycle of these automotive E/E system semiconductors that we supply, thereby contributing to continuous security risk management for automobiles.
* Toshiba Group’s Cyber Security Report 2023

Accompanying the ongoing expansion of the surveillance camera market, strong demand has arisen in recent years for large-capacity, high-performance hard disk drives (HDDs) for surveillance camera systems including surveillance digital video recorders and surveillance network video recorders. In response to this market demand, Toshiba Electronic Devices & Storage Corporation has released the DT02-VH series of3.5-inch shingled magnetic recording (SMR) HDDs for surveillance camera systems. * Toshiba Review (Vol.76, No.6, November 2021)

SiC MOSFETs are attracting attention as a new generation of power devices due to their superior characteristics. SBD-embedded MOSFETs have also been expanding into the mainstream. The Toshiba Group has developed a novel design method for SBD-embedded SiC MOSFETs that makes it possible to simulate the maximum current density at which the operation of parasitic pn diodes does not occur (Jumax) using a simple structure model and design devices with an enhanced value of Jumax. * Toshiba Review (Vol.77, No.1, January 2022)

H. Majima et al., “A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge”, Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials (SSDM), Virtual conference, 2021, pp716-717
© Japan Society of Applied Physics

K. Mori et al., "3D integration technology with photosensitive mold for fan-out package", Japanese Journal of Applied Physics,  Volume 60, Number SB, SBBC03, Doi: 10.35848/1347-4065/abeabe
© 2021 The Japan Society of Applied Physics

X. Wang et al., “An Approach to Create Trench Depth Prediction Model”, AEC/APC Symposium Asia 2021, Virtual symposium, 2021

T. Suwa, “2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs”, 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, USA, 2021, pp. 32-35. Doi:10.1109/SISPAD54002.2021.9592570
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore(https://ieeexplore.ieee.org/document/9592570)

K. Agawa et al., “Novel Connector Mechanism Using Anisotropic Conductive Rubber for Trillion-Node Engine as an IoT Edge Platform”, 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, 2021, pp. 514-519. Doi:10.1109/ECTC32696.2021.00092
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore(https://ieeexplore.ieee.org/document/9501793)

Y. Iwakaji et al., "Analysis of dependence of dV_CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor", Japanese Journal of Applied Physics,  Volume 60, Number SB, SBBD02, Doi: 10.35848/1347-4065/abd29f
© 2020 The Japan Society of Applied Physics

GaN power semiconductor devices are expected to contribute to the realization of small, low-loss power electronics equipment. In particular, MOS-type GaN devices are promising candidates for next-generation power devices that can achieve normally-o­ff operation by themselves in addition to high-speed switching. The Toshiba Group has developed a process technology for MOS-type GaN devices that makes it possible to selectively control the crystallization of an AlN film on the recessed gate structure.

* Toshiba Review (Vol.75, No.6, November 2020)

A trend toward the replacement of conventional mechanical relays with photorelays, which provide several advantages including smaller size, higher speed switching, longer lifetime, and lower power consumption, has recently been progressing in line with the introduction of photorelays offering more sophisticated and more efficient functions. We have developed new photorelay products that achieve smaller size and higher rated on-state current by utilizing its proprietary chip stacking technologies to attach PDA and LED chips to a MOSFET chip, in addition to a package structure that dissipates the heat of parts more efficiently.

* Toshiba Review (Vol.75, No.6, November 2020)

The widespread dissemination of mobile devices has consequently led to growing demand for countermeasures against ESD generated by the frequent contact of such devices with the human body. We are actively focusing on the development of TVS diodes that can improve the reliability of electronic devices by protecting them against ESD.

* Toshiba Review (Vol.75, No.6, November 2020)

SiC MOSFETs are a key type of power device for power supply units because of the superior performance of SiC materials. However, improvement of the reliability of SiC MOSFETs is hindered by issues associated with low carrier conductivity as a result of increased crystal defects. We have developed a new device structure for 1.2 kV-class SiC MOSFETs that can improve reliability by means of an embedded SBD located in parallel to each pn diode so as to prevent current flowing through the diode.

* Toshiba Review (Vol.75, No.6, November 2020)

5G mobile communications commenced in Japan in March 2020 in response to the increasing volume of content requiring large-capacity and high-speed communication capability. As increased data traffic volumes lead to a dramatic increase in the power consumption of base stations for mobile communications, it has become necessary to further improve the efficiency of power supply units in these base stations. We have developed 80 V power MOSFET products featuring superior on-resistance, gate charge, and reverse recovery charge characteristics by utilizing its proprietary U-MOS X-H process.

* Toshiba Review (Vol.75, No.6, November 2020)

With the increasing use of electronic components, the introduction of simulation technologies using MBD methods to verify the functions and performance of overall systems has been rapidly expanding in order to efficiently develop in-vehicle systems. We have developed the technique focusing on the evaluation of thermal performance and EMI noise in switching operations and confirmed the effectiveness of this approach using the technique when selecting an optimal MOSFET device and switching speed.

* Toshiba Review (Vol.76, No.5, September 2021)

As demand for nearline HDDs for data centers is growing, the requirements for data storage solutions for both cyber and physical spaces are diversifying, making it necessary to develop new innovative technologies for not only reading but also writing data. High-reliability technologies are attracting plenty of attention as a means to overcome the limit to the HDD recording density and thereby solve the information explosion problem.

T. Nishiwaki et al., “Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 155-158. Doi: 10.23919/ISPSD50666.2021.9452278 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452278)

T. Ohguro et al., “Stacked chip of Si power device with double side Cu plating for low on-resistance”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 187- 190. Doi: 10.23919/ISPSD50666.2021.9452216 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452216)

K. Kobayashi et al., “Drift Layer Design utilizing Intermediate Boron Ion-implantation for 100-V-class Two-step-oxide Field-Plate Trench MOSFET to Improve Switching Loss”, 2021 33^rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 191-194. Doi: 10.23919/ISPSD50666.2021.9452300 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452300)

H. Kono et al., “Improving the specific on-resistance and short-circuit ruggedness tradeoff of 1.2-kV-class SBD-embedded SiC MOSFETs through cell pitch reduction and internal resistance optimization”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 227-230. Doi: 10.23919/ISPSD50666.2021.9452314 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452314)

K. Komatsu et al., “Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation”, 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, 2021, pp. 315-318. Doi: 10.23919/ISPSD50666.2021.9452267 © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9452267)

T. Ohguro et al., “High Performance and Reliable Si Power Devices with double side Cu plate”, 5^th International Electric Vehicle Technology Conference (EVTeC 2021), Online conference, 2021 © Society of Automotive Engineers of Japan, Inc.

H. Kono, T. Iguchi, T. Hirakawa, H. Irifune, T. Kawano, M. Furukawa, K. Sano, M. Yamaguchi,H. Suzuki, and G. Tchouangue, “3.3 kV all SiC MOSFET module with Schottky barrier diode embedded SiC MOSFET”, PCIM Europe Conference 2021, Online, 2021, pp. 914-919.

With the progressive introduction of model-based development (MBD) processes utilizing simulation technologies into a broad range of system design work in the fields of power electronics and in-vehicle electronics. We have developed an IGBT device model taking into consideration the dynamic flow of both electrons and holes in switching operations as a replacement for conventional models.

* Toshiba Review (Vol.75, No.6, November 2020)

IEC 62368-1, a new safety standard for audiovisual and information and communication equipment, was introduced in December 2020. In order to enhance the protection of power supply lines of such equipment in compliance with IEC 62368-1, which is a hazard based standard, demand has arisen for electronic fuse integrated circuits (eFuse ICs) offering higher protection performance compared with conventional protective devices, as typified by physical fuses.

* Toshiba Review (Vol.75, No.6, November 2020)

IGBTs are widely used in various applications ranging from home appliances for electric power transmission and distribution systems. We have developed the following products by optimizing the structures of the respective devices: (1) voltage-resonant type IGBTs that can operate at switching frequencies of several tens of kHz for equipment such as home appliances, and (2) press-pack IEGTs with a high breakdown voltage and reduced conduction loss.

* Toshiba Review (Vol.75, No.6, November 2020)

We have been progressively developing and introducing a wide variety of discrete semiconductor products for electric energy conversion and protection applications ranging from small- to large-scale power systems, and is also making e¬fforts to develop advanced technologies and commercialize products applying these technologies.

* Toshiba Review (Vol.75, No.6, November 2020)

K. Tomita et al., “Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon”, 2020 International Symposium on Semiconductor Manufacturing (ISSM), Tokyo, Japan, 2020, doi: 10.1109/ISSM51728.2020.9377528 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

 (https://ieeexplore.ieee.org/document/9377528)

H. Kato et al., “Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage”, 2020 International Symposium on Semiconductor Manufacturing (ISSM), Tokyo, Japan, 2020, doi: 10.1109/ISSM51728.2020.9377512 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore 

(https://ieeexplore.ieee.org/document/9377512)

K. Mori et al., “3D Packaging and Integration Technology using Photosensitive Mold”, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM),Virtual conference, 2020, pp131-132 © Japan Society of Applied Physics

K. Fuse et al., “Analysis of Recovery Oscillation Inhibition for Cathode Design of a 1200 V Silicon Diode Using an LCR Circuit Model”, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM), Virtual conference, 2020, pp261-262 © Japan Society of Applied Physics

Y. Iwakaji et al., “Analysis of Dependence of dVCE/dt on Turn-off Characteristics with a 1200 V Double-gate IGBT”, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM), Virtual conference, 2020, pp257-258 © Japan Society of Applied Physics

T. Suwa, “Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD”, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 2020, pp. 141-144. Doi: 10.23919/SISPAD49475.2020.9241680 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/9241680)

M. Furukawa, H. Kono, K. Sano, M. Yamaguchi, H. Suzuki, T. Misao and G. Tchouangue, “Improved reliability of 1.2kV SiC MOSFET by preventing the intrinsic body diode operation”, PCIM Europe Conference 2020, Germany, 2020

H. Kasai et al., “Investigation of the Breakdown Voltage Degradation under Carrier Injection in STI-based PchLDMOS Transistors,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 427-430, doi: 10.1109/ISPSD46842.2020. 9170073 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170073)

M. Oshiro, et al., “Sub-GHZ Phased-Based Ranging System: Implementation and Evaluation,” 2020 IEEE 91st Vehicular Technology Conference (VTC2020-Spring), Antwerp, Belgium, 2020, pp.1-7, doi: 10.1109/VTC2020-Spring48590.2020.9128575 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/9128575)

T. Mizoguchi et al., “High Accurate Representation of Turn-on Switching Characteristics by New IGBT and FWD Compact Models for High Power Applications,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 478-481, doi: 10.1109/ISPSD46842.2020.9180189 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/9170189)

K. Komatsu et al., “Investigating the Highly Tolerant LDMOS Cell Array Design against the Negative Carrier Injection and the ESD Events,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 404-407, doi: 10.1109/ISPSD46842.2020.9170188 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170188)

D. Yoshikawa et al., “Improvement of Cosmic Ray Robustness in IGBT with Deep-N layer,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 486-489, doi: 10.1109/ISPSD46842.2020.9170029 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170029)

T. Sugiyama et al., “Stable cascode GaN HEMT operation by direct gate drive,” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 22-25, doi: 10.1109/ISPSD46842.2020.9170130 © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/9170130)

Microcontroller units (MCUs) for IoT devices are required both a secure communication function for connecting to the network and a firmware update function to enhance integrity and availability. What are MCUs that can establish and manage the network connections of IoT devices easily and securely, and secure firmware rotation technique for firmware update that can protect IoT devices?

*Toshiba Review (Vol.74, No.6, November 2019)

Toshiba Group has been engaged in the development of microwave-assisted magnetic recording (MAMR) technology and has achieved a technological breakthrough in increasing the density of HDDs using a head with a spin torque oscillator (STO) to enhance the recording performance.

* Toshiba Review (Vol.74, No.6, November 2019)

Large-capacity HDDs that allow data centers to store huge volumes of electronic information have become increasingly important as a key product for the development of information infrastructure in recent years. What is shingled magnetic recording (SMR) technology that increases the capacity of HDDs by overwriting data on a recording track analogous to the shingling of a roof?

* Toshiba Review (Vol.74, No.6, November 2019)

With the fast-growing prevalence of cloud services, the volume of data generated is increasing. This, in turn, is creating expanding demand for large-capacity HDDs for data centers. What are technologies that realized the large capacity HDD of 16 Tbytes using CMR?

* Toshiba Review (Vol.74, No.6, November 2019)

The Toshiba Group is offering various solutions aimed at expanding the CPS through the development of hard disk drives (HDDs) that can hold large volumes of valuable data, as well as semiconductor products that can not only process these data but also control edge devices based on the processing results.

* Toshiba Review (Vol.74, No.6, November 2019)

The growth and prevalence of cloud services has set the stage for the increasing dissemination of different types of storage services for different types of data storage needs. We has realized high capacity CMR HDD by using TDMR technology.

With the prevalence of IoT, big-data, cloud, and other IT services, the volume of data generated is increasing exponentially. We has developed fitting nine platters into the 3.5-inch HDD using helium-sealed design and high-density assembly design.

To reduce the power consumption of data centers, it has indispensable to improve the drive efficiency of fan motors. What is motor control technology to realize high-efficiency drive of cooling fans and reducing the board space necessary for motor rotation control?

*Toshiba Review (Vol.74, No.6, November 2019)

In advanced driver assistance systems (ADAS), Attention has been increasingly focused on recognition and classification technologies applying deep convolutional neural networks (DCNNs). What is a hardware accelerator (HWA) for automotive applications that efficiently implement DCNN processing?

*Toshiba Review (Vol.74, No.5, September 2019)

T. Suwa et al., “Investigation of TCAD Calibration for Saturation and Tail Current of 6.5kV IGBTs”, 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 2019, pp. 101-104. Doi: 10.1109/SISPAD.2019.8870514 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore

(https://ieeexplore.ieee.org/document/8870514)

The high quality level is required resulting from the advancement of technologies for automotive electronics and electroactuation. What are the technologies and efforts to achieve zero defects ?

*Toshiba Review (Vol.73, No.6, November 2018)

What are the front-loading of electro magnetic compatibility (EMC) and thermal design technologies for analog IC and power MOSFET to improve reliability of electronic control unit (ECUs) and shorten development periods in line?

*Toshiba Review (Vol.73, No.6, November 2018)

In the automobile industry, strengthening of environmental regulations has led to the accelerated development of eco-friendly automobiles. Toshiba Electronic Devices & Storage Corporation has been developing various automotive semiconductor devices that are contributing to the enhancement of battery monitoring system.

*Toshiba Review (Vol.73, No.6, November 2018)

What is our power MOSFET that supports the electric power steering system (EPS) which advances with the promotion of ADAS and automated driving ?

*Toshiba Review (Vol.73, No.6, November 2018)

The TMPM4K is expected to offer high performance due to increased processing speed while reducing costs because of the smaller number of parts required.

*Toshiba Review (Vol.74, No.1, January 2019)

K. Kobayashi et al., "100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 99-102. doi: 10.1109/ISPSD.2019.8757615 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757615)

T. Nishiwaki et al., "Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 91-94. doi: 10.1109/ISPSD.2019.8757695 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757695)

H. Kobayashi et al., "Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 515-518. doi: 10.1109/ISPSD.2019.8757691 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757691)

Leaves having various functions were developed in this project commissioned by the New Energy and Industrial Technology Development Organization (NEDO), and the practicality and reliability of the platform have been verified.

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR," 2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, Japan, 2019, pp. 1-3. doi: 10.1109/CoolChips.2019.8721340 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8721340)

K. Komatsu et al., "Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 363-366.　doi: 10.1109/ISPSD.2019.8757670 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757670)

T. Mizoguchi, Y. Sakiyama, N. Tsukamoto and W. Saito, "High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 307-310　doi: 10.1109/ISPSD.2019.8757656 Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757656)

In line with this trend in the development of semiconductor relays, Toshiba Electronic Devices & Storage Corporation has developed and released products including power metal-oxide-semiconductor field-effect transistors (MOSFETs) and controller integrated circuits (ICs) to control the gate on/o_ state of power MOSFETs for automotive.
*Toshiba Review (Vol.73, No.6 November 2018)

K. Agawa, R. Ninomiya, M. Takizawa, T. Mori and T. Sakurai, "Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine," 2018 IEEE CPMT Symposium Japan (ICSJ), Kyoto, 2018, pp. 55-58.　doi: 10.1109/ICSJ.2018.8602895 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8602895)

Accompanying the expanding dissemination of eco-friendly automobiles, demand has been increasing for reduction of the power consumption of automotive semiconductor devices.Our Bluetooth LE IC and power amplifier facilitate reduction of the size of in-vehicle electronic systems.
*Toshiba Review (Vol.73, No.6, November 2018)

Toshiba is engaged in the development of motor driver IC products for automotive use, which achieve a balance between high-density mounting and reduction of package size in order to realize compact size in-vehicle motor systems
*Toshiba Review (Vol.73, No.6, November 2018)

Innovations in automotive sensing technologies to support safe driving have been advancing as a result of the practical realization of ADAS. Toshiba is working the development of deep neural network-intellectual property (DNN-IP)、as well as improving conventional recognition technologies for Visconti™
*Toshiba Review (Vol.73, No.6, November 2018)
* Visconti™ is a trademark of Toshiba Electronic Devices & Storage Corporation

Y. Yamada et al., "7.2 A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications," 2019 IEEE International Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 132-134. doi: 10.1109/ISSCC.2019.8662459Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8662459)

H. Yamashita et al., "Low noise superjunction MOSFET with integrated snubber structure," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 32-35. doi: 10.1109/ISPSD.2018.8393595Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393595)

Toshiba is promoting the development of a wide variety of advanced automotive semiconductor devices and contributing to the advancement of CASE (Connected, Autonomous, Shared, Electric) technologies.
*Toshiba Review (Vol.73, No.6, November 2018)

T. Sugiyama et al., "Evaluation methodology for current collapse phenomenon of GaN HEMTs," 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, 2018, pp. 3B.4-1-3B.4-5. doi: 10.1109/IRPS.2018.8353559Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8353559)

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393596)

Recently the importance of EMC (Electromagnetic Compatibility) testing is increasing against the backdrop of ECE R10 legislation. Toshiba EMC testing laboratories have received ISO / IEC 17025 certification.

K. Yoshioka et al., "A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique," 2018 IEEE International Solid - State Circuits Conference - (ISSCC), San Francisco, CA, 2018, pp. 92-94. doi: 10.1109/ISSCC.2018.8310199Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8310199)

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR," 2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, 2018, pp. 1-3. doi: 10.1109/CoolChips.2018.8373079 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8373079)

Toshiba has been developing a SIMO DC-DC converter equipped with a maximum-on-time (MOT) control technology, and a channel-consolidated multiple-switching (CCMS) control technology for IoT devices.
*Toshiba Review (Vol.72, No.5, November 2017)

In response to a need for a power management function, our PMMCD series ICs are expected to contribute to solution realizing a more compact footprint and cost savings by reducing the size and number of peripheral parts.
*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba developed the TC7738WBG power management IC for cSSD which achieves a reduction in power consumption and package size through the use of Wafer-level chip scale package (WCSP).
*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba has been releasing a wide variety of SiC power devices, and are also developing GaN power devices capable of performing high-speed switching operations, including a quasi-normally-off GaN HEMT and GaN MOSFET.
*Toshiba Review (Vol.72, No.5, November 2017)

For power transmission and distribution applications, Toshiba has developed and released a line of injection enhanced gate transistors (IEGTs) known as press-pack IEGTs (PPIs) as switching devices for HVDC systems.
*Toshiba Review (Vol.72, No.5, November 2017)

Smartphones have become an indispensable part of daily life. To enhance the functionality of mobile devices, Toshiba is promoting the development of LDO regulator ICs, featuring superior power supply ripple rejection characteristics, load transient response and low power consumption.
*Toshiba Review (Vol.72, No.5, November 2017)

To conserve energy while meeting the increasing demand for electricity, Toshiba is promoting the development of various ICs and power devices, ranging from mobile, automotive, and other industrial applications to electric energy conversion equipment.
*Toshiba Review (Vol.72, No.5, November 2017)