Contact us

Uma nova janela será aberta Uma nova janela será aberta

Electrical characteristics of MOSFETs (Static Characteristics RDS(ON))

Drain-source on-state resistance (RDS(ON)
The resistance across drain and source when the MOSFET is in the "on" state


The specified constant drain current, ID, is applied until VGSreaches the specified voltage. At this point, drain-source voltage is measured. On-state resistance is calculated by dividing it by the value of drain current, ID.
Note: Keep the open-circuit voltage of the constant-current source below the drain-source breakdown voltage.

Measurement of forward transfer admittance

Gate-source voltage, VGS, is increased until drain current, ID, reaches the specified value. Then, VGSis changed only slightly, and the resulting change in drain current, ID, is measured.

Data sheet description

Characteristics Symbol Test Conditions Min Typ Max Unit
Drain-source on-state resistance RDS(ON) VGS = 4.5 V, ID = 50 A 0.95 1.35
VGS = 10 V, ID = 50 A 0.65 0.80
To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.