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What are super junction MOSFETs (SJ-MOSs)?

  1. SJ-MOS has pillar-shaped P layer (P pillar layer) in N layer. P and N layers are aligned alternately.
  2. Depletion layer spreads in N- layer by applying VDS, but the way it spreads in SJ-MOS is different from that in general D-MOS. (See electric field intensity figures. Electric field intensity indicates the status of depletion layer.)
  3. In the case of D-MOS the electric field intensity is the strongest at P/N- layer interface. When the electric field intensity exceeds the limit of silicon, break-over phenomenon (breakdown phenomenon) occurs, and this is the voltage limit. On the other hand, in the case of SJ-MOS, the electric field intensity is uniform in N- layer.
  4. As a result, SJ-MOS can be designed with N- layer that has lower resistance, realizing low-ON-resistance products.
    SJ-MOS can realize the same ON resistance as that of D-MOS but with smaller chip size than D-MOS.

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