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What are IEGTs?

In the case of a high-voltage IGBT, decrement of carrier density in the drift layer (N- layer) of the emitter side makes it difficult to obtain low VCE(sat).
IEGTs have been developed to obtain low VCE(sat) at high voltage (generally, more than 1,200V).
The figure below shows the IEGT’s structure and principle.
It has trench gate structure and dummy trench gate structure. As a result, carriers are accumulated under dummy gate structure. And this mechanism increases carrier density.
High carrier density decreases resistance of drift layer, and makes VCE(sat) low.

Structure and carrier density of IEGT

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