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What distinguishes the usage of MOSFETs from that of IGBTs?

IGBTs have a structure suitable for high-current applications.
The major characteristics of IGBTs are as follows:

  • Has high input impedance equivalent to a MOSFET and can be driven by a voltage
  • Exhibits conductivity modulation like a bipolar transistor and thus is suitable for high-voltage and high-current applications
  • Low in carrier injection and recombination, has fast switching characteristics and thus is ideal for high-power control applications

Provides the best switching performance in a voltage region exceeding 400 V and a current region exceeding 10 A, and thus is suitable for applications in which a large current flows instantaneously such as motor drive circuits.

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