Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers
May 21, 2026
Toshiba Electronic Devices & Storage Corporation
KAWASAKI, Japan–Toshiba Electronic Devices & Storage Corporation ("Toshiba") today started shipping test samples of "TW007D120E," a 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers that is also suitable for use in renewable energy-related equipment.
With the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. Toshiba has addressed these requirements for next-generation AI data centers by developing TW007D120E, which will contribute to lower power consumption and to the miniaturization and higher efficiency of power supply systems.
TW007D120E is built around Toshiba’s proprietary trench-gate structure[1], which achieves industry-leading[2] low On-resistance per unit area (RDS(on)A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss. Compared with Toshiba’s current products, TW007D120E reduces RDS(on)A by approximately 58%[3] and improves the figure of merit, On-resistance × gate-drain charge (RDS(on) × Qgd), which represents the trade-off between conduction loss and switching loss, by approximately 52%[3]. These characteristics will help to realize highly efficient operation and reduced heat generation in data center power supply systems and contribute to improved overall system efficiency.
The new product is housed in a QDPAK package that supports top-side cooling. This contributes to both higher power density implementation and enhanced thermal performance in the power stage, which are essential for power conversion in next-generation AI data centers.
Toshiba will prepare for mass production of TW007D120E during fiscal year 2026 and will continue to expand its lineup, including development for automotive applications. Through the trench-gate SiC MOSFET, the company will contribute to improved power efficiency and reduced CO₂ emissions in data centers and a wide range of industrial equipment, supporting the realization of a decarbonized society.
TW007D120E is based on results obtained from JPNP21029, a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).
Notes:
[1] A device structure in which fine trenches are formed in the semiconductor substrate and gate electrodes are embedded within the trenches.
[2] Toshiba research, as of May 2026.
[3] Comparison of the newly developed 1200V SiC MOSFET with Toshiba’s 3rd-generation SiC MOSFET (TW015Z120C). Toshiba research, as of May 2026.
Applications
- Power supplies for data centers (AC-DC, DC-DC)
- Photovoltaic inverters
- Uninterruptible power supply (UPS)
- EV charging stations
- Energy storage systems
- Industrial motors
Features
- Low On-resistance and low RDS(on)A
- Low switching loss and low RDS(on) × Qgd
- Low gate drive voltage: VGS_ON=15V to 18V
- High thermal performance QDPAK package
Main Specifications
(Unless otherwise specified, Tvj=25°C)
| Part number | TW007D120E | |||
|---|---|---|---|---|
| Package | Name | QDPAK | ||
| Absolute maximum ratings |
Drain-source voltage VDSS (V) | 1200 | ||
| Drain current (DC) ID (A) | Tc=25°C | 172 | ||
| Electrical character- istics |
Drain-source On-resistance RDS(on) (mΩ) |
VGS=15V | Typ. | 7.0 |
| Gate threshold voltage Vth (V) | VDS=10V | 3.0 to 5.0 | ||
| Total gate charge Qg (nC) | VGS=15V | Typ. | 317 | |
| Gate-drain charge Qgd (nC) | VGS=15V | Typ. | 33 | |
| Input capacitance Ciss (pF) | VDS=800V | Typ. | 13972 | |
| Diode forward voltage VSD (V) | VGS=0V | Typ. | 3.2 | |
Note: Specifications and schedules for products under development are subject to change without notice.
Performance Comparison Charts
Test conditions: VGS=18V (TW015Z120C), VGS=15V (TW007D120E), Tvj=25°C. Toshiba research as of May 2026.
Follow the link below for more on Toshiba’s SiC Power Devices.
SiC Power Devices
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Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.