Lineup Expansion of 3300 V SiC MOSFET Modules That Contribute to High Efficiency and Downsizing of Industrial Equipment

Product News 2023-12

The package photograph of lineup expansion of 3300 v sic MOSFET modules that contribute to high efficiency and downsizing of industrial equipment.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched chopper SiC MOSFET modules “MG800FXF1ZMS3[1]” and ”MG800FZF1JMS3[2]” with ratings of 3300 V and 800 A using 3rd generation silicon carbide (SiC) MOSFET and SBD chips for industrial equipment and has expanded its lineup.

The new products MG800FXF1ZMS3 and MG800FXF1JMS3 adopt an iXPLV[3] package with Ag sintering internal bonding technology and high compatibility with mounting. These offers low conduction loss with low drain-source on-voltage (sense) of 1.3 V (typ.)[4], and also offers low switching loss with low turn-on switching loss of 230 mJ (typ.)[5] and low turn-off switching loss of 230 mJ (typ.)[5]. These contribute to reducing the power loss of equipment and the size of cooling device. 
The lineup of Toshiba's MOSFET modules of iXPLV package has three products, including existing product MG800FXF2YMS3 (3300 V / 800 A / Dual SiC MOSFET module.) This provides a wide range of product selection. This can be used in 2-level inverters, buck/boost converters and 3-level inverters.

Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.

[1] High-side: SiC MOSFET, Low-side: SiC SBD
[2] High-side: SiC SBD, Low-side: SiC MOSFET
[3] iXPLV: intelligent fleXible Package Low Voltage
[4] Test condition: ID=800 A, VGS=+20 V, Tch=25 °C
[5] Test condition: VDD=1800 V, ID=800 A, Tch=175 °C


Industrial equipment

  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Motor control equipment for industrial equipment, etc.


  • Low drain-source on-voltage (sense):
    VDS(on)sense=1.3 V (typ.) (ID=800 A, VGS=+20 V, Tch=25 °C)
  • Low turn-on switching loss:
    Eon=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C)
  • Low turn-off switching loss:
    Eoff=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C)

Main Specifications

(Tc=25 °C, unless otherwise specified)

Part number



Toshiba’s package name iXPLV
Drain-source voltage  VDSS  (V) 3300
Gate-source voltage  VGSS  (V) +25 / -10
Drain current (DC)  ID  (A) 800
Drain current (pulsed)  IDP  (A) 1600
Channel temperature  Tch  (°C) 175
Isolation voltage  Visol  (Vrms) 6000
Drain-source on-voltage (sense)
VDS(on)sense  (V)
ID=800 A, VGS=+20 V,
Tch=25 °C
Typ. 1.3
Source-drain on-voltage (sense)
VSD(on)sense  (V)
IS=800 A, VGS=+20 V,
Tch=25 °C
Typ. 1.3
Source-drain off-voltage (sense)
VSD(off)sense  (V)
IS=800 A, VGS=-6 V,
Tch=25 °C
Typ. 2.1
Turn-on switching loss
Eon  (mJ)
VDD=1800 V, ID=800 A,
Tch=175 °C
Typ. 230
Turn-off switching loss
Eoff  (mJ)
Typ. 230

Internal Circuit

The illustration of internal circuit of MG800FXF1ZMS3
The illustration of internal circuit of MG800FXF1JMS3

Application Circuit Example

The illustration of application circuit example of 3 level three phase inverters

Note: The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

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