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Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment

- The lineup covers 1200V and 650V products -

August 30, 2022

Toshiba Electronic Devices & Storage Corporation

Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment

KAWASAKI, Japan— Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs[1][2] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.

The new products reduce on-resistance per unit area (RDS(ON)A) by about 43%[3], allowing the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%[4]. This cuts the switching loss by about 20%[5], and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.

Toshiba will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.

Notes:
[1] Toshiba has developed a device structure that reduces on-resistance per unit area (RDS(ON)A) by using a structure with built-in schottky barrier diode developed for the 2nd generation MOSFETs, and also reduces feedback capacitance in the JFET region.
[2] MOSFET: metal-oxide-semiconductor field-effect transistor
[3] Comparison of the new 1200V SiC MOSFETs when RDS(ON)A is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[4] Comparison of the new 1200V SiC MOSFETs when RDS(ON)*Qgd is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[5] Comparison of the new 1200V SiC MOSFETs and the 2nd generation SiC MOSFETs. Toshiba survey.

Applications

  • Switching power supplies (servers, data center, communications equipment, etc.)
  • EV charging stations
  • Photovoltaic inverters
  • Uninterruptible power supplies (UPS)

Features

  • Low on-resistance per unit area (RDS(ON)A)
  • Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
  • Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V

Main Specifications

 (@Ta=25°C unless otherwise specified)

Part  number Package Absolute maximum ratings Electrical characteristics Sample Check&Availability
Drain-source 
voltage
VDSS
(V)
Gate-source 
voltage
VGSS
(V)
Drain 
current
(DC)
ID
(A)
Drain-Source 
On-resistance
RDS(ON)
typ.
(mΩ)
Gate
threshold 
voltage
Vth
(V)
Total
gate
charge
Qg
typ.
(nC)
Gate- 
drain
charge
Qgd
typ.
(nC)
Input 
capacitance
Ciss
typ.
(pF)
Diode
forward 
voltage
VDSF
typ.
(V)
@Tc=25°C @VGS=18V @VDS=10V @VDS=400V,
f=100kHz
@VGS= -5V
TW015N120C TO-247 1200 -10 to 25 100 15 3.0 to 5.0 158 23 6000 -1.35

Buy Online

TW030N120C 60 30 82 13 2925 Buy Online
TW045N120C 40 45 57 8.9 1969 Buy Online
TW060N120C 36 60 46 7.8 1530 Buy Online
TW140N120C 20 140 24 4.2 691 Buy Online
TW015N65C 650 100 15 128 19 4850 Buy Online
TW027N65C 58 27 65 10 2288 Buy Online
TW048N65C 40 48 41 6.2 1362 Buy Online
TW083N65C 30 83 28 3.9 873 Buy Online
TW107N65C 20 107 21 2.3 600 Buy Online

Follow the links below for more on the new products.

1200 Products
TW015N120C
TW030N120C
TW045N120C
TW060N120C
TW140N120C

650 Products
TW015N65C
TW027N65C
TW048N65C
TW083N65C
TW107N65C

Follow the links below for more on Toshiba SiC MOSFETs.

SiC Power Devices
SiC MOSFETs

To check availability of the new products at online distributors, visit:

1200 Products

TW015N120C
Buy Online

TW030N120C
Buy Online

TW045N120C
Buy Online

TW060N120C
Buy Online

TW140N120C
Buy Online

650V Products

TW015N65C
Buy Online

TW027N65C
Buy Online

TW048N65C
Buy Online

TW083N65C
Buy Online

TW107N65C
Buy Online

Customer Inquiries

  Power Device Sales & Marketing Dept.

  Tel: +81-44-548-2216

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.