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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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SiC Power Devices

Silicon carbide (SiC) is a semiconductor material with a high electric breakdown field, saturated electron velocity, and thermal conductivity, compared to silicon (Si). Therefore, when used in semiconductor devices, they achieve higher voltage resistance, higher-speed switching, and lower ON-resistance compared to Si devices. This is expected to be a next-generation low-loss device that contribute to lower power consumption and system downsizing.

Lineup

SiC MOSFETs
Toshiba’s 1200V SiC MOSFET offers high-speed switching and low ON-resistance making it excellent for high-power, high-efficiency industrial power supplies, low-loss solar inverters and UPS.
SiC Schottky Barrier Diodes
Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.
SiC MOSFETs contribute to lower power consumption for industrial applications
Toshiba’s TW070J120B 1200V SiC MOSFET features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
Loss comparison of turn-off switching
Loss comparison of turn-off switching

Reference Design

Single Phase PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing single phase PFC power supply.

Single Phase PFC Power Supply Basic Simulation Circuit

Interleaved PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing interleaved PFC power supply.

Interleaved PFC Power Supply Basic Simulation Circuit

Bridgeless PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing bridgeless PFC power supply.

Bridgeless PFC Power Supply Basic Simulation Circuit

1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply
Toshiba's 1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply Reference Design

Semiconductor / power supply / power management / topology / flyback / AC-DC / MOSFET / diode / Toshiba

Simulation

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