We are thrilled to invite you from May 6 - 8 to our booth 229 in hall 4A at PCIM 2025 in Nuremberg to experience Toshiba's "Excellence in Power". Our advanced power semiconductor technologies help you imagine solutions & products that enhance performance, reliability, and sustainability. Stay up-to-date with our journey towards PCIM by bookmarking this page.
Your Team Toshiba
Committed to People. Committed to the future.
Curious what to expect at PCIM 2025? Our press release delivers insights:
Toshiba drives ‘Excellence in Power’ at PCIM 2025
Gate Drive Circuit Solution for SiC MOSFET Module
The solution offers a built-in implementation of a SiC MOSFET Module. It provides an independent open-collector fault signal output of high-side and low-side. The output voltage is +20V (typ.) / -6.7V (typ.), the output current ±9.8A (max.) and the max. PWM frequency 50kHz.
TLP5231 – isolated pre-gate driver SSM6K804R – n-ch MOSFET
TPC8132 – p-ch MOSFET TCR1HF50B – LDO Regulator
SSM3K15AFS – n-ch MOSFET 2SC6026MFV – npn transistor
Single channel H-Bridge driver with integrated current monitoring
The H-Bridge drivers TB67H453FNG/FTG provide an extended operating voltage range, max ratings and a built-In logic regulator for ultra-low standby current. As a benefit no external capacitor is needed. Target applications are robot vacuum cleaners, home and office applications, industrial equipment and many more.
Automotive Thermal Management
Toshiba's SmartMCDTM enables space and system cost savings in automotive applications. The device features an integrated microcontroller with a gate driver to create an effective solution for automotive pump, fans and more.
Impact of SBD embedding into SiC MOSFETs on dynamic behavior at High Temperature
Shunsuke Asaba
Oral session - May 6, at 11:20 – 11:40 on Stage: Brüssel 1.
Accurate IGBT Circuit Model Considering Impact of Dynamic Avalanche Phenomenon
3rd Poster Session - Foyer - Modelings and Simulations II - May 8, 8 sessions in total from 11:15 – 12:45
You missed our speakers at PCIM 2024? Click to catch up.
H. Kono et al., "Improved reliability of a 2200 V SiC MOSFET module with an epoxy-encapsulated insulated metal substrate", 04/2024 Power Conversion and Intelligent Motion (PCIM) Europe, Nürnberg, Germany, 2024, pp. 2017-2022. Doi: 10.30420/566262283
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10654147)
Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method
H. Irifune et al., "Paralleling 3.3-kV/800-A rated SiC-MOSFET Modules: An Optimization Method", 042024 Power Conversion and Intelligent Motion (PCIM) Europe, Nürnberg, Germany, 2024, pp. 2023-2030. Doi: 10.30420/566262284
© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/10654094)
Watch our demo videos for
SmartMCD
Servo Drive Reference Model
Automated Guided Vehicle (AGV)
Time Sensitive Network
High efficiency power conversion & control
Interested in more power topics? Our Passion for Power Solutions Page ties it neatly up for you, providing indepth information about our latest product & solution portfolio.
Empowering Motion
Toshiba has over 40 years of core competence delivering high quality, reliable motor control MCDs and MCUs to meet customer's needs, enhance energy efficiency, and support a more sustainable future.
Armin Derpmanns, Vice President Marketing & Operations at Toshiba Electronics Europe, spoke with Iris Stroh from Markt&Technik, a renowned electronics publication in Germany. (*Interview in German language. Copyright: Markt & Technik, electronicnet.de)
Host Robin Mitchell and Armin Derpmanns, Vice President of Marketing and Operations at Toshiba discuss the growing role of silicon carbide, and Toshiba's strategic move towards sustainability and digitalization.
Find detailed information about the benefits of our MOSFET-portfolio including SiC, HV- and LV-MOSFETs at our innovation centre.
Toshiba's high voltage laboratory in EMEA allows us to address application-related questions from customers more rapidly.
Learn more about TEE’s focus on power in our interview* with the magazine Markt & Technik. *Please note that the interview is in German..
In the podcast Passion for technology the need for miniaturisation of analog devices is discussed.