Europe (EMEA)

Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Innovation Centre

At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.


PPIs are Press-Pack IEGTs. PPIs are pressure-welded high-power devices with built-in IEGT chips. PPIs contribute to energy saving, miniaturization, and efficiency of equipment through low-loss chips and high-reliability packages.

Press-Pack IEGTs (PPIs)
Multiple IEGT chips are placed in an array on the same plane, and individual IEGT chips are uniformly pressed from both sides using a molybdenum plate. The collector and emitter electrodes of each IEGT chip are brought into contact with the corresponding copper electrodes of the press pack enclosure via the molybdenum plate by applying mechanical pressure. This not only makes electrical connections and but also allows heat dissipation.
PPI Structure and Cross-Sectional View Of a PPI
Principle of Operation
IEGT is a high power device that can control large current with voltage drive which improves the sharp increase of the on-state voltage accompanying the increase in collector-emitter voltage by devising the element structure of the emitter of the IGBT*.

*IGBT: Insulated Gate Bipolar Transistor
Cross-Sectional View of and Carrier Distribution in an IEGT


Name Date


Technical inquiry

Contact us

Contact us

Frequently Asked Questions