Power semiconductors using SiC (silicon carbide), a new material, are superior to Si (silicon) power semiconductors (IGBT) which are currently the mainstream, in high-speed switching propertie and are superior to those used in high-temperature environments. We responded to the need for higher voltage rating and larger current capacity for equipment for industrial applications, such as inverters and converters for railway vehicles, and photovoltaic inverters. And we provides the most suitable devices for low loss and miniaturization.
The new product uses highly mounting compatible package named iXPLV (intelligent fleXible Package Low Voltage) to meet the needs for high-efficiency, compact equipment for industrial applications such as inverters and converters for railway vehicles, and renewable energy power generation systems.
MG600V2YMS3(1200V/600A Dual, Under development) / MG400V2YMS3(1700V/400A Dual, Under development)
We are developing modules with a newly developed SiC MOSFET/SBD chip that realizes low parasitic inductance while adopting industry-standard packages. These modules apply photovoltaic inverters, industrial inverters, inverters and converters for railway vehicles, etc., and contributes to miniaturization and weight reduction of industrial equipment by high-speed switching and low-loss operation.
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