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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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选择应用

查找您下一个设计所需要的一切。只需选择一个应用,然后单击以查看框图,即可找到我们的半导体解决方案。

通过缓冲电路降低开关噪声(低尖峰技术)

TPH1R306P1(60V)

东芝不断改进各种性能,以提高应用设备的效率,减少MOSFET发热。在第8代MOSFET(U-MOSⅧ-H系列)中,除了这些改进外,还采用了新的单元结构,以降低开关过程中的噪声和振铃。此外,如下图所示,第9代U-MOSⅨ-H系列提供一系列低尖峰型和高效型产品,前者具有优化的缓冲电路常数。

开关波形比较(VDSS=60V型)

TPH1R306PL,TPH1R306P1开波形

R负载开关波形

VDD=30V,ID=50A
RG=4.7Ω,RGS=4.7Ω
电阻负载
Ta=25℃

TPH1R306PL,TPH1R306P1波形

L负载开关波形(trr

VDD=30V
IDR=25A
di/dt=220A/μs
感性负载
Ta=25℃

东芝的TPH1R306P1是U-MOSⅨ-H系列追求高效率的低尖峰低噪声产品。与传统的TPH1R306PL比较,对于R负载开关波形,VDS的尖峰噪声减小约13%,对于L负载开关波形((Trr),VDS的尖峰噪声减小约为35%。

U-MOSⅧ-H/U-MOSⅨ-H系列MOSFET

电路仿真

利用开关电源选型工具库(SMPS Lib.),您可以根据实际需求选择和下载电源单元的各种基本拓扑,以便在仿真环境中验证MOSFET的性能。 

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