Switching noise reduction by snubber circuits (Low Spike Technology)
Toshiba has continually improved various performances to improve the efficiency of application equipment and to reduce heat generation in MOSFETs. In the Gen-8 MOSFET (U-MOSⅧ-H series), in addition to these improvements, noise and ringing during switching are reduced by adopting a new cell structure. Furthermore, as shown in the figure below, the Gen-9 U-MOSⅨ-H series includes a lineup of low-spike-type products with snubber constants optimized and high-efficiency-type products.
Switching waveform Comparison (VDSS=60V type）
R-load switching waveform
VDD=30V, ID=50A
RG=4.7Ω,RGS=4.7Ω
Resistance load
Ta=25℃
L-load switching waveform(trr)
VDD=30V
IDR=25A
di/dt=220A/μs
Inductive load
Ta=25℃
Toshiba's TPH1R306P1 is a low-spike and low-noise product of the U-MOSⅨ-H series that pursues efficiency. Compared with the conventional TPH1R306PL, the spike noise of VDS is reduced by approximately 13% for the R load switching waveform and approximately 35% for the L load switching waveform (Trr).
U-MOSⅧ-H/U-MOSⅨ-H Series MOSFETs
Circuit Simulation
Switched Mode Power Supply Library is the service which can select and download various basic topologies of power supply unit based on your actual requirement to verify the behavior of MOSFET with your simulation environment.
Related information
Queries about purchasing, sampling and IC reliability
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