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This page is listing links of the press release and topics published by Toshiba Electronic Devices and Storage Corporation.
Information in the news and topics, including product prices and specifications, content of services and contact information, is current on the date of the news announcement, but is subject to change without prior notice. The news before March 31, 2017 is the news published by Toshiba Storage & Electronic Devices Solutions Company.

Release Year
Category
News Category
05-06-2024
Lineup Expansion of 1200 V SiC MOSFET Module that Contributes to High Efficiency and Downsizing of Industrial Equipment
03-06-2024
Toshiba Succeed in Reducing On-resistance in SBD embedded SiC MOSFET While Securing Reliability and Short-Circuit Ruggedness
06-03-2024
Lineup Expansion of 1700 V SiC MOSFET Module that Contributes to High Efficiency and Downsizing of Industrial Equipment
06-12-2023
Lineup Expansion of 3300 V SiC MOSFET Modules That Contribute to High Efficiency and Downsizing of Industrial Equipment
31-08-2023
Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss
29-08-2023
Toshiba Develops Industry’s First 2200V Dual Silicon Carbide (SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
10-08-2023
Toshiba’s Newly Developed 2200 V SiC MOSFETs Deliver Low Power Loss that Contributes to the Simplification, Miniaturization and Weight Reduction of Inverter Systems (Update on August 18)
13-07-2023
Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
09-12-2022
Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability
30-08-2022
Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment
22-07-2022
Toshiba’s New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss
26-01-2022
Toshiba’s Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules will Contribute to Smaller, More Efficient Industrial Equipment
23-06-2021
Toshiba’s New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss
10-05-2021
Toshiba’s New Technology for SiC Power Modules Improves Reliability and Reduces Size
25-02-2021
Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment
19-10-2020
Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply
30-07-2020
Toshiba’s New Device Structure Improves SiC MOSFET Reliability
16-07-2020
Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB
26-05-2020
SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F
29-11-2017
Expanded lineup of the second generation of SiC SBD products with a TO-220-2L package: TRS2E65F, TRS3E65F
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