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This page is listing links of the press release and topics published by Toshiba Electronic Devices and Storage Corporation.
Information in the news and topics, including product prices and specifications, content of services and contact information, is current on the date of the news announcement, but is subject to change without prior notice. The news before March 31, 2017 is the news published by Toshiba Storage & Electronic Devices Solutions Company.

Release Year
Category
25-09-2024
Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment
26-07-2024
Toshiba Develops Technology that Can Mitigate Parasitic Oscillation Between Parallel-Connected Chips in SiC Power Modules with Minimal Gate Resistance that Support High Speed Switching
03-06-2024
Toshiba Succeeds in Reducing On-resistance in SBD embedded SiC MOSFET While Securing Reliability and Short-Circuit Ruggedness
31-08-2023
Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss
29-08-2023
Toshiba Develops Industry’s First 2200V Dual Silicon Carbide (SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
10-08-2023
Toshiba’s Newly Developed 2200 V SiC MOSFETs Deliver Low Power Loss that Contributes to the Simplification, Miniaturization and Weight Reduction of Inverter Systems
13-07-2023
Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
30-08-2022
Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment
22-07-2022
Toshiba’s New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss
23-06-2021
Toshiba’s New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss
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