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This page is listing links of the press release and topics published by Toshiba Electronic Devices and Storage Corporation.
Information in the news and topics, including product prices and specifications, content of services and contact information, is current on the date of the news announcement, but is subject to change without prior notice. The news before March 31, 2017 is the news published by Toshiba Storage & Electronic Devices Solutions Company.

Release Year
Category
News Category
12-11-2024
Toshiba開始提供具有低導通電阻和高可靠性、用於汽車牽引逆變器的裸片1200V SiC MOSFET的試樣
25-09-2024
Toshiba第三代碳化矽肖特基柵極二極體產品系列增添1200 V新成員,將推動工業電源設備實現高效率
26-07-2024
東芝開發出可減輕SiC功率模組中並聯晶片間寄生振盪的技術,該技術具有最小閘極電阻,可支援高速切換
05-06-2024
有助於實現工業設備高效化和小型化的1200V SiC MOSFET模組產品線擴展
03-06-2024
東芝成功在降低SBD嵌入式SiC MOSFET的導通電阻的同時確保了其可靠性和短路耐受性
06-03-2024
1700V SiC MOSFET模組的產品陣容擴大,有助於工業設備的高效化和小型化
06-12-2023
東芝擴展3300V SiC MOSFET模組的產品陣容,有助於工業設備的高效率化及小型化
31-08-2023
Toshiba推出用於工業裝置的第三代SiC MOSFET,採用四引腳封裝,可降低開關損耗
29-08-2023
Toshiba開發出業界首款2200V雙碳化矽(SiC) MOSFET模組,為工業裝置的高效率和小型化做出貢獻
10-08-2023
東芝開發2200V SiC MOSFET來實現低功耗、系統簡化及小型輕量化( 8月18日更新)
13-07-2023
Toshiba發佈第三代650V碳化矽蕭特基障壁二極體,有助於提高工業設備效率
09-12-2022
東芝開發帶嵌入式肖特基勢壘二極體的低導通電阻高可靠性SiC MOSFET
30-08-2022
東芝推出第三代碳化矽MOSFET來提高工業設備效率
22-07-2022
東芝的新型SiC MOSFET具有低導通電阻,顯著降低了開關損耗
26-01-2022
東芝新推出的1200V和1700V碳化矽MOSFET模組幫助實現尺寸更小、更高效率的工業設備
23-06-2021
Toshiba’s New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss
10-05-2021
東芝的碳化矽功率模組新技術提高了可靠性及同時縮小了尺寸
25-02-2021
Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment
19-10-2020
Toshiba Launches 1200V Silicon Carbide MOSFET that Contributes to High-efficiency Power Supply
30-07-2020
東芝推出可提高SiC (碳化矽)MOSFET可靠性元件結構
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