Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment
KAWASAKI, Japan— Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs[1][2] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.
The new products reduce on-resistance per unit area (RDS(ON)A) by about 43%[3], allowing the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%[4]. This cuts the switching loss by about 20%[5], and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.
Toshiba will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.
Applications
- Switching power supplies (servers, data center, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
Features
- Low on-resistance per unit area (RDS(ON)A)
- Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
- Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V
Main Specifications
(@Ta=25°C unless otherwise specified)
| Part number | Package | Absolute maximum ratings | Electrical characteristics | Sample Check&Availability | |||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Drain-source voltage VDSS (V) |
Gate-source voltage VGSS (V) |
Drain current (DC) ID (A) |
Drain-Source On-resistance RDS(ON) typ. (mO) |
Gate threshold voltage Vth (V) |
Total gate charge Qg typ. (nC) |
Gate- drain charge Qgd typ. (nC) |
Input capacitance Ciss typ. (pF) |
Diode forward voltage VDSF typ. (V) |
|||
| @Tc=25°C | @VGS=18V | @VDS=10V | @VDS=400V, f=100kHz |
@VGS= -5V | |||||||
| TW015N120C | TO-247 | 1200 | -10 to 25 | 100 | 15 | 3.0 to 5.0 | 158 | 23 | 6000 | -1.35 |
|
| TW030N120C | 60 | 30 | 82 | 13 | 2925 |  |
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| TW045N120C | 40 | 45 | 57 | 8.9 | 1969 | |
|||||
| TW060N120C | 36 | 60 | 46 | 7.8 | 1530 | |
|||||
| TW140N120C | 20 | 140 | 24 | 4.2 | 691 | |
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| TW015N65C | 650 | 100 | 15 | 128 | 19 | 4850 | |
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| TW027N65C | 58 | 27 | 65 | 10 | 2288 | |
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| TW048N65C | 40 | 48 | 41 | 6.2 | 1362 | |
|||||
| TW083N65C | 30 | 83 | 28 | 3.9 | 873 | |
|||||
| TW107N65C | 20 | 107 | 21 | 2.3 | 600 | |
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Follow the links below for more on the new products.
1200 Products
TW015N120C
TW030N120C
TW045N120C
TW060N120C
TW140N120C
650 Products
TW015N65C
TW027N65C
TW048N65C
TW083N65C
TW107N65C
Follow the links below for more on Toshiba SiC MOSFETs.
Notes:
[1] Toshiba has developed a device structure that reduces on-resistance per unit area (RDS(ON)A) by using a structure with built-in schottky barrier diode developed for the 2nd generation MOSFETs, and also reduces feedback capacitance in the JFET region.
[2] MOSFET: metal-oxide-semiconductor field-effect transistor
[3] Comparison of the new 1200V SiC MOSFETs when RDS(ON)A is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[4] Comparison of the new 1200V SiC MOSFETs when RDS(ON)*Qgd is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[5] Comparison of the new 1200V SiC MOSFETs and the 2nd generation SiC MOSFETs. Toshiba survey.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.