Cross Reference Search
require 3 characters or more.
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Keyword Search
Parametric Search
Stock Check & Purchase
Select Product Categories
Select Application
Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.
New Products / News
Junction Field-Effect Transistors (JFETs)
Download "Chapter III : Transistors" (PDF:2.0MB)
＜Operation of JFETs＞
JFET : Junction Field-Effect Transistor
(1) In the N-channel junction field-effect transistor (Fig. 3-3 (a)), when a voltage is applied between the drain and the source, electrons flow from the source to the drain.
(2) When a reverse bias is applied between the gate and source, the depletion layer expands and suppresses the electron flow in (1). (Narrowing path of electron flow)
(3) If the reverse bias voltage between the gate and source is further increased, the depletion layer blocks the channel and the flow of electrons stops.
As shown above, voltage applied between gate and source controls the condition between drain and source. So FETs are voltage-driven devices.
Note: Direction of current flow is opposite to that of electron flow. The mechanism of widening of the depletion layer is the same as for diode.
Chapter III : Transistors
Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode
Related information
- Products
- Application Notes
- FAQ
A new window will open