Silicon carbide (SiC) is a semiconductor material with a high electric breakdown field, saturated electron velocity, and thermal conductivity, compared to silicon (Si). Therefore, when used in semiconductor devices, they achieve higher voltage resistance, higher-speed switching, and lower ON-resistance compared to Si devices. This is expected to be a next-generation low-loss device that contribute to lower power consumption and system downsizing.
Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss
Toshiba Develops Industry’s First 2200V Dual Silicon Carbide (SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
Toshiba’s Newly Developed 2200 V SiC MOSFETs Deliver Low Power Loss that Contributes to the Simplification, Miniaturization and Weight Reduction of Inverter Systems
Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment
Toshiba’s New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss