SiC Power Devices

Toshiba’s 1200V SiC MOSFETs offers high-speed switching and low ON-resistance making it excellent for high-power, high-efficiency industrial power supplies, low-loss solar inverters and UPS.

Toshiba offers 650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A.

Our SiC MOSFETs modules have high-speed switching properties, and use SiC (silicon carbide), a new material optimized for low-loss and miniaturization of power converters for the industry, such as inverters and converters for railway vehicles and photovoltaic inverters.

Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V and 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (V_F) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in R_DS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process^[1] has greatly improved our on-resistance per unit area R_onA, and the performance index R_on*Q_gd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.