SiC MOSFETs
Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.
Lineup
(@Ta=25°C unless otherwise specified)
| Generation | Part Number | Package | Absolute Maximum Ratings | Electrical Characteristics | SampleCheck＆Availability | |||||
|---|---|---|---|---|---|---|---|---|---|---|
| VDSS (V) |
VGSS (V) |
ID (A) |
RDS(ON) (mΩ) |
Vth (V) |
Qg (nC) |
Ciss (pF) |
||||
| Tc=25°C | VGS=18V | VDS=10V | ||||||||
| typ. | typ. | typ. | ||||||||
| 3rd | TW015N120C | TO-247 | 1200 | -10 to 25 | 100 | 15 | 3.0 to 5.0 | 158 | 6000 |  |
| TW030N120C | 60 | 30 | 82 | 2925 | |
|||||
| TW045N120C | 40 | 45 | 57 | 1969 | |
|||||
| TW060N120C | 36 | 60 | 46 | 1530 | |
|||||
| TW140N120C | 20 | 140 | 24 | 691 | |
|||||
| TW015N65C | 650 | 100 | 15 | 128 | 4850 | |
||||
| TW027N65C | 58 | 27 | 65 | 2288 | |
|||||
| TW048N65C | 40 | 48 | 41 | 1362 | |
|||||
| TW083N65C | 30 | 83 | 28 | 873 | |
|||||
| TW107N65C | 20 | 107 | 21 | 600 | |
|||||
| TW015Z120C | TO-247-4L(X) | 1200 | 100 | 15 | 158 | 6000 | |
|||
| TW030Z120C | 60 | 30 | 82 | 2925 | |
|||||
| TW045Z120C | 40 | 45 | 57 | 1969 | |
|||||
| TW060Z120C | 36 | 60 | 46 | 1530 | |
|||||
| TW140Z120C | 20 | 140 | 24 | 691 | |
|||||
| TW015Z65C | 650 | 100 | 15 | 128 | 4850 | |
||||
| TW027Z65C | 58 | 27 | 65 | 2288 | |
|||||
| TW048Z65C | 40 | 48 | 41 | 1362 | |
|||||
| TW083Z65C | 30 | 83 | 28 | 873 | |
|||||
| TW107Z65C | 20 | 107 | 21 | 600 | |
|||||
Technical Articles
3rd generation Silicon Carbide(SiC) MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V and 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process[1] has greatly improved our on-resistance per unit area RonA, and the performance index Ron*Qgd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
-mosfets_features_1_en.png)
3rd generation SiC MOSFETs TO-247-4L
Compared to Si (silicon) IGBTs and MOSFETs, which are currently mainstream, power MOSFETs using SiC (silicon carbide) not only excel in low conduction loss and operation in high-temperature environments, but also contribute to low-loss application through high-speed switching. TO-247-4L(X), a new package for our 3rd generation SiC MOSFETs, is a 4-terminal type, and by reducing the influence of the inductance of the source wire inside the package, it is possible to draw out high-speed switching performance. This contributes to lower loss in applications such as servers, uninterruptible power supplies (UPS), and Photovoltaics Inverter.
2nd Generation SiC MOSFETs/IGBT Switching Loss Comparison
Toshiba’s TW070J120B 1200V SiC MOSFETs features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
2nd Generation Features of SiC MOSFETs
Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low on-resistance.
What are the merits of using SiC MOSFETs?
Toshiba SiCMOS achieves low on-resistance and high-speed switching compared with Si IGBT.
Open a new door for power supply with Toshiba’s SiC MOSFETs
SiC MOSFETs support downsizing and low-loss power supplies
Product
3-Phase AC 400 V Input PFC Converter Reference Design
Using 2nd Generation SiC MOSFETs to improve the efficiency of power supply systems
5 kW Isolated Bidirectional DC-DC Converter Reference Design
Using 2nd Generation SiC MOSFETs to improve the efficiency of power supply systems
Documents
Technical topics
Applications
Reference Design
Queries about purchasing, sampling and IC reliability
Stock Check & Purchase
require 3 characters or more.
keyword:
Click this link to check inventory of TOSHIBA parts available at those distributors of Toshiba America Electronic Components, Inc. ("TAEC") who participate in netCOMPONENTS electronic components sourcing database. Please note that TAEC is providing this link solely as a convenience. All quantities listed in inventory are subject to change and information provided in this page does not guarantee availability of product(s), please check with Distributor before relying on the quantities listed. In order to guarantee availability you must place an order with one of Toshiba’s distributors.
Related information
A new window will open