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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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SiC MOSFETs

Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.

Lineup

 (@Ta=25°C unless otherwise specified)

Generation Part  Number Package Absolute Maximum Ratings Electrical Characteristics SampleCheck&Availability
Drain-Source 
voltage
VDSS
(V)
Gate-Source 
voltage
VGSS
(V)
Drain 
current
(DC)
ID
(A)
Drain-Source 
On-resistance
RDS(ON)
typ.
(mΩ)
Gate
threshold 
voltage
Vth
(V)
Total
gate
charge
Qg
typ.
(nC)
Gate- 
drain
charge
Qgd
typ.
(nC)
Input 
capacitance
Ciss
typ.
(pF)
Diode
forward 
voltage
VDSF
typ.
(V)
@Tc=25°C @VGS=18V @VDS=10V @VDS=400V, f=100kHz @VGS= -5V
3rd TW015N120C TO-247 1200 -10 to 25 100 15 3.0 to 5.0 158 23 6000 -1.35

Stock Checking

TW030N120C 60 30 82 13 2925 Stock Checking
TW045N120C 40 45 57 8.9 1969 Stock Checking
TW060N120C 36 60 46 7.8 1530 Stock Checking
TW140N120C 20 140 24 4.2 691 Stock Checking
TW015N65C 650 100 15 128 19 4850 Stock Checking
TW027N65C 58 27 65 10 2288 Stock Checking
TW048N65C 40 48 41 6.2 1362 Stock Checking
TW083N65C 30 83 28 3.9 873 Stock Checking
TW107N65C 20 107 21 2.3 600 Stock Checking
2nd TW070J120B TO-3P(N)   46 70
@VGS=20V
4.2 to 5.8 67 25 1680
@VDS=400V, f=100kHz
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3rd generation Silicon Carbide(SiC) MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V and 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process[1] has greatly improved our on-resistance per unit area RonA, and the performance index Ron*Qgd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
3rd generation Silicon Carbide(SiC) MOSFETs
2nd Generation SiC MOSFETs/IGBT Switching Loss Comparison
Toshiba’s TW070J120B 1200V SiC MOSFETs features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
2nd Generation Features of SiC MOSFETs
Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low on-resistance.
What are the merits of using SiC MOSFETs?
Toshiba SiCMOS achieves low on-resistance and high-speed switching compared with Si IGBT.
Open a new door for power supply with Toshiba’s SiC MOSFETs
SiC MOSFETs support downsizing and low-loss power supplies
3-Phase AC 400 V Input PFC Converter Reference Design
Using 2nd Generation SiC MOSFETs to improve the efficiency of power supply systems
5 kW Isolated Bidirectional DC-DC Converter Reference Design
Using 2nd Generation SiC MOSFETs to improve the efficiency of power supply systems

Documents

Name Date

Technical topics

Reference Design

5 kW Isolated Bidirectional DC-DC Converter
This reference design provides design guide, data and other contents of 5kW Isolated Bidirectional DC-DC Converter using dual active bridge (DAB) conversion method with 1200V SiC MOSFETs.
DC-DC Converter
3-Phase AC 400V Input PFC Converter
This reference design provides design guide, data and other contents of 4 kW 3-phase AC 400 V input PFC converter using 3-phase totem-pole topology with 1200 V SiC MOSFET.

Applications

LED Lighting
Air Conditioner
Uninterruptible power supply
Server

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