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SiC MOSFETs
Wide band gap power semiconductors leverage the benefits of Toshiba’s second-generation SiC (silicon carbide) device structure to achieve attractive benefits for high voltage products. Toshiba’s SiC MOSFETs offer improved reliability, superior operation in high-temperature environments, high-speed switching and low on-resistance characteristics compared to conventional Si (silicon) power semiconductors. SiC MOSFETs are suitable for a variety of high-power, high-efficiency applications including industrial power supplies, solar inverters, and UPS.
Recommended product
1200V SiC MOSFET TW070J120B
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Fabricated with Toshiba’s second-generation chip design[1], which improves the reliability of SiC MOSFETs, the new device realizes low input capacitance, a low gate-input charge, and low drain-to-source ON-resistance.
[1] Toshiba news release on July 30, 2020: “Toshiba’s New Device Structure Improves SiC MOSFET Reliability”
(Unless otherwise specified, Ta=25℃)
Part number |
Package |
Absolute maximum ratings |
Electrical Characteristics |
|||||
|---|---|---|---|---|---|---|---|---|
VDSS (V) |
ID (A) |
RDS(ON) typ. (mΩ) |
Vth |
Qg typ. (nC) |
Ciss |
VDSF typ. (V) |
||
TO-3P(N) |
1200 |
36.0 |
70 |
4.2 to 5.8 |
67 |
1680 |
-1.35 |
|
[Note]
VDSS: Drain-source voltage, ID: Drain current (DC) @Tc=25℃, RDS(ON): Drain-source On-resistance @VGS=20V,
Vth: Gate threshold voltage @VDS=10V, ID=20mA, Qg: Total gate charge,
Ciss: Input capacitance, VDSF: Diode forward voltage @IDR=10A, VGS=-5V
Open a new door for power supply with Toshiba’s SiC MOSFETs
Solving environmental and energy problems is an important global issue. While the demand for electric power continues to escalate, the call for energy conservation and the need for highly efficient and compact electric power conversion systems increases rapidly.
Power MOSFET using new SiC materials offer high voltage resistance, high-speed switching, and low on-resistance properties compared to conventional silicon (Si) MOSFET and IGBT products. This will greatly reduce power dissipation and supports a reduction in the size of equipment.
Power MOSFET using new SiC materials offer high voltage resistance, high-speed switching, and low on-resistance properties compared to conventional silicon (Si) MOSFET and IGBT products. This will greatly reduce power dissipation and supports a reduction in the size of equipment.
3-Phase AC 400 V Input PFC Converter Reference Design
Using SiC MOSFETs to improve the efficiency of power supply systems
5 kW Isolated Bidirectional DC-DC Converter Reference Design
Using SiC MOSFETs to improve the efficiency of power supply systems
What are the merits of using SiC MOSFETs?
Toshiba SiCMOS achieves low on-resistance and high-speed switching compared with Si IGBT.
SiC MOSFETs Contribute to lower power consumption for industrial applications
Toshiba’s TW070J120B 1200V SiC MOSFET features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
Features of SiC MOSFETs
Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low on-resistance.
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