SSM6K819R

Small Low ON resistance MOSFETs

Description

Application Scope DC-DC Converters / Power Management Switches
Feature Low drain-source on-resistance
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 10 A
Power Dissipation PD 1.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 36.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 25.8
Input capacitance (Typ.) Ciss - 1110 pF
Total gate charge (Typ.) Qg VGS=4.5V 8.5 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Mar,2020

Feb,2024

Dec,2023

Mar,2024

Mar,2024

Technical inquiry

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FAQs

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