Small Low ON resistance MOSFETs
| Application Scope | Power Management Switches / DC-DC Converters |
|---|---|
| Polarity | N-ch + P-ch |
| Generation | U-MOSⅦ-H / U-MOSⅥ |
| Internal Connection | Independent |
| RoHS Compatible Product(s) (#) | Available |
| Toshiba Package Name | SOT-1118 (UDFN6) |
|---|---|
| Package Image |
|
| Package Code | SOT-1118 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.0×0.75 |
| Package Dimensions | View |
| Land pattern dimensions | View |
| Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |
![]() Download from UltraLibrarian® in your desired CAD format |
| SamacSys CAD model (Symbol, Footprint and 3D model) |
Download from SamacSys |
Please refer to the link destination to check the detailed size.
|
(Note1) |
Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. |
|
(Note2) |
SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys. |
|
(Note3) |
Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. |
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 20 | V |
| Gate-Source voltage (Q1) | VGSS | +/-8 | V |
| Drain current (Q1) | ID | 4.0 | A |
| Drain-Source voltage (Q2) | VDSS | -20 | V |
| Gate-Source voltage (Q2) | VGSS | +/-12 | V |
| Drain current (Q2) | ID | -4.0 | A |
| Power Dissipation | PD | 1.0 | W |
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.5V | 108 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.8V | 74 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=2.5V | 45 | mΩ |
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4.5V | 33 | mΩ |
| Input capacitance (Q1) (Typ.) | Ciss | - | 410 | pF |
| Total gate charge (Q1) (Typ.) | Qg | VGS=4.5V | 3.6 | nC |
| Gate threshold voltage (Q2) (Max) | Vth | - | -1.2 | V |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 45 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4.5V | 56 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-2.5V | 76 | mΩ |
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.8V | 157 | mΩ |
| Input capacitance (Q2) (Typ.) | Ciss | - | 480 | pF |
| Total gate charge (Q2) (Typ.) | Qg | VGS=-4.5V | 6.74 | nC |
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