TPC8132

Power MOSFET (P-ch single)

  • Related Reference Design(1)

Description

Application Scope Lithium-Ion Secondary Batteries / Power Management Switches
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP-8
Package Image Toshiba TPC8132 Power MOSFET (P-ch single) product SOP-8 package image
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
4.9×6.0×1.52
Package Dimensions View
Land pattern dimensions View
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

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*1 *3

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*2 *3

Download from SamacSys
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 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -40 V
Gate-Source voltage VGSS +20/-25 V
Drain current ID -7.0 A
Power Dissipation PD 1.9 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -2.0 V
Gate threshold voltage (Min) Vth - -0.8 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 25
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 33
Input capacitance (Typ.) Ciss - 1580 pF
Total gate charge (Typ.) Qg VGS=-10V 34 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Nov,2015

Aug,2024

Oct,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS Stock Check Search
TPC8132,LQ 2500 Yes

Reference Design

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have increasingly replaced conventional Si power devices in power converters, such as industrial motor drives and railway traction inverters, to reduce size and power loss.
This gate driver is designed to drive such modules safely and includes multiple protection functions. It uses the pre-driver coupler TLP5231 together with external buffer MOSFETs, enabling large gate-drive current while providing isolation for high-current/high-voltage SiC MOSFET modules. The design offers a two-channel configuration (high-side and low-side) on a compact 62 mm × 100 mm board that can be integrated into our Dual MOSFET modules.
We also provide key design considerations, usage and adjustment guidance for each circuit block, along with circuit diagrams and PCB pattern information to support your design work. Note: new designs using 2SC6026MFV are Not Recommended for New Design (NRND) as of April 26.

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