TPC8132

Power MOSFET (P-ch single)

  • 相關參考設計(1)

數據表

TPC8132 數據表/日文[Jan,2014]PDF: 362KB

數據表

TPC8132 數據表/英文[Jan,2014]PDF: 267KB

Simulation Model

PSpice Model[Nov,2015]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 16KB

Reliability Information

Reliability Data[Oct,2024]PDF: 273KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 931KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.1[Jul,2026]PDF: 4956KB

數據表

TPC8132 數據表/日文[Jan,2014]PDF: 362KB

數據表

TPC8132 數據表/英文[Jan,2014]PDF: 267KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 931KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Nov,2015]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 16KB

Reliability Information

Reliability Data[Oct,2024]PDF: 273KB

Catalog

Selection Guide MOSFETs 2026 Rev1.1[Jul,2026]PDF: 4956KB

產品概要

Application Scope Lithium-Ion Secondary Batteries / Power Management Switches
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOP-8
Package Image 東芝 TPC8132 Power MOSFET (P-ch single)產品 SOP-8 封裝圖片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 4.9×6.0×1.52
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage VDSS -40 V
Gate-Source voltage VGSS +20/-25 V
Drain current ID -7.0 A
Power Dissipation PD 1.9 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Max) Vth - -2.0 V
Gate threshold voltage (Min) Vth - -0.8 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 25 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 33 mΩ
Input capacitance (Typ.) Ciss - 1580 pF
Total gate charge (Typ.) Qg VGS=-10V 34 nC
購買及樣品申請
請聯繫東芝的官方經銷商之一或最近的東芝銷售辦事處
點選以下連結搜索和購買小量樣品

文檔

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Nov,2015

Aug,2024

Oct,2024

Orderable part number

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS Stock Check Search
TPC8132,LQ 2500 Yes

Reference Design

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
近年來， SiC MOSFET模組比傳統的IGBT模組尺寸更小、損耗更低，因此越來越受歡迎，在工業馬達驅動、鐵路逆變器等功率轉換應用中非常有用。這是一款具有各種保護功能的閘極驅動電路，可安全地驅動SiC MOSFET模組。 該設計採用TLP5231預驅動光耦，該元件能夠透過外部緩衝MOSFET實現大電流閘極驅動，並內建多種保護功能，可實現大電流／高壓SiC MOSFET模組的隔離閘極驅動。它由62mm×100mm板上的高壓側和低壓側兩個通道組成，可安裝在東芝雙MOSFET模組上。 提供有關電路各部分的設計技巧、操作方法以及電路圖和PCB 圖案等設計資訊，請將其用於您的設計。 請注意：自2026年4月起，2SC6026MFV 已被列為「不建議用於新設計（NRND）」產品。
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