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Trends in and Future Outlook for Semiconductor Devices with Enhanced Energy Efficiency More

Trends in and Future Outlook for Semiconductor Devices with Enhanced Energy Efficiency

Among the issues that need to be addressed on a global scale are the growth in energy consumption and rise in carbon dioxide (CO2) emissions.
To conserve energy while meeting the increasing demand for electricity, it is necessary to improve energy efficiency at all stages from electric power generation to electricity consumption.
  *Toshiba Review (Vol.72, No.5, November 2017)

LDO Regulator ICs Enhancing Sophistication of Mobile Devices More

LDO Regulator ICs Enhancing Sophistication of Mobile Devices

With the expansion of the mobile phone market in recent years, global annual shipments of mobile phone products will exceed 1.8 billion units in fiscal 2017. Smartphones have become an indispensable part of daily life due to their advanced functionality that cannot be realized with conventional feature phones.

 *Toshiba Review (Vol.72, No.5, November 2017)

PPI Switching Devices for HVDC Systems More

PPI Switching Devices for HVDC Systems

Reduction of the power consumption of equipment used in the power electronics field is an important issue as part of efforts to prevent global warming. Particularly for power transmission and distribution applications, high-voltage direct current (HVDC) transmission systems have been put to practical use as an energy-saving method suitable for long-distance, large-capacity power transmission.
  *Toshiba Review (Vol.72, No.5, November 2017)

Evolution of Wide-Bandgap Semiconductors for Power Devices Expanding Fields of Application More

Evolution of Wide-Bandgap Semiconductors for Power Devices Expanding Fields of Application

Wide-bandgap semiconductors including silicon carbide (SiC) and gallium nitride (GaN) are currently attracting attention for use in next-generation power devices due to their excellent characteristics offering higher energy efficiency.
  *Toshiba Review (Vol.72, No.5, November 2017)

Power Management IC for cSSDs Realizing Space Saving and Low Power Consumption More

Power Management IC for cSSDs Realizing Space Saving and Low Power Consumption

Though the higher speed interfaces and larger storage capacities of client SSDs (cSSDs) may result in a trend toward increasing power consumption in the future, it has become necessary to improve the energy conservation performance of cSSDs in accordance with international standards.
  *Toshiba Review (Vol.72, No.5, November 2017)

PMMCD Series Ics with Motor Control and Power Management Functions More

PMMCD Series Ics with Motor Control and Power Management Functions

In MCD ICs, there is a need for a power management function that can supply several different voltages to other devices in the equipent and manage their power consumption, in addition to the basic motor control function.
  *Toshiba Review (Vol.72, No.5, November 2017)

SIMO DC-DC Converter with High Efficiency over Wide Load Range for IoT Devices More

SIMO DC-DC Converter with High Efficiency over Wide Load Range for IoT Devices

A wireless sensor node for Internet of Things (IoT) devices is mostly in standby mode, in which its power consumption is less than 1 mW, and only enters active mode intermittently when performing data communication, at which time its power consumption increases to several tens of mW. Hence, single-inductor multiple-output (SIMO) DC-DC converters for IoT devices must achieve high conversion efficiency over a wide range of loads.
  *Toshiba Review (Vol.72, No.5, November 2017)

Data Selection and De-noising Based on Reliability for Long-Range and High-Pixel Resolution LiDAR More

Data Selection and De-noising Based on Reliability for Long-Range and High-Pixel Resolution LiDAR

Toshiba Electronic Devices & Storage Corporation has developed a new logic technology that significantly improves on the reliability of automotive LiDAR by realizing long-range distance object measurement and high quality 3D images.

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR," 2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, 2018, pp. 1-3. doi: 10.1109/CoolChips.2018.8373079

A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique More

A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique

New circuit technology pushes the LiDAR’s measured distance to 200m, achieving the world’s longest distance, twice than that of other automotive LiDARs.


K. Yoshioka et al., "A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique," 2018 IEEE International Solid - State Circuits Conference - (ISSCC), San Francisco, CA, 2018, pp. 92-94.
doi: 10.1109/ISSCC.2018.8310199

* Co-Authored paper led by  Toshiba R&D Center


Toshiba EMC Testing Laboratory Receives ISO/IEC 17025 Certification NEW More

In selling products such as IoT and automotive equipment with high performance, high integration and miniaturization, compliance with standards stipulated by laws and ordinances, etc. is required.

And recently EMC (Electromagnetic Compatibility) is also advancing legal regulations in many countries.
Particularly in automotive semiconductors, the importance of EMC testing is increasing against the backdrop of ECE R10 legislation.


Low noise superjunction MOSFET with integrated snubber structure NEW More

Low noise superjunction MOSFET with integrated snubber structure

High efficiency with low noise emission is achieved by adding the snubber area in  SJ-MOSFET structure.

H. Yamashita et al., "Low noise superjunction MOSFET with integrated snubber structure," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 32-35. doi: 10.1109/ISPSD.2018.8393595

* Co-Authored paper with Corporate Manufacturing Engineering Center, Toshiba Corporation

Breakthrough of Drain Current Capability and
On-Resistance Limits by Gate-Connected Superjunction MOSFET NEW More

Breakthrough of Drain Current Capability and On-Resistance Limits by Gate-Connected Superjunction MOSFET

The power MOSFET is a key component in switching mode power supply circuits and inverter systems. This paper reports design concepts, device structure and device characteristics on the new structure of Gate-Connected Superjunction MOSFET to cope with both high drain current density and low on-resistance.

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596

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