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At the Toshiba Innovation Centre we constantly strive to inspire you with our technologies and solutions. Discover how to place us at the heart of your innovations.
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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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The steps required for simulation are to select the topology and set the power supply specifications. The topology is selected from the basic topologies provided. In addition, by setting four items such as input and output voltage according to the power supply specifications, the recommended MOSFETs will be automatically narrowed down based on the set values, making it easy to select a MOSFET which matches the target specifications.
If the desired MOSFET is not displayed in the list, it can be search by setting conditions such as product-name and drain-source-voltage (VDSS) from the search window. The search window displays data such as the drain current (ID), drain-source on-resistance (RDS(ON)), and generation information. By sorting the data in any way, the MOSFET matching the requirements can be searched.
The circuit parameters can also be changed as required.
Login is required to use the circuit simulator.